Opening speed improved superhigh-voltage silicon carbide thyristor and manufacturing method thereof
A technology of silicon carbide crystal and silicon carbide, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of limited improvement of turn-on time, increase the complexity of test circuits, etc., and achieve the effect of increased turn-on speed
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Embodiment 1
[0061] Step 1. First select a 4H-SiC single crystal substrate, and then epitaxially grow silicon carbide N buffer layer 1, silicon carbide P+ buffer layer 2, silicon carbide P long base region 3, and silicon carbide N- low-doped silicon carbide substrate on the substrate surface. Region 4, silicon carbide N highly doped region 5 and silicon carbide P+ emitter region 6, the thickness of the 4H-SiC single crystal substrate is 300-350 μm;
[0062] The doping concentration of silicon carbide N buffer layer 1 is 2x10 18 cm -3 , the thickness of SiC N buffer layer 1 is 1.0 μm, and the doping concentration of SiC P+ buffer layer 2 is 2x10 17 cm -3 , the thickness of the silicon carbide P+ buffer layer 2 is 2.0 μm, and the doping concentration of the silicon carbide P long base region 3 is 2×10 14 cm -3 , the thickness of the silicon carbide P long base region 3 is 160 μm, and the doping concentration of the silicon carbide N-lowly doped region 4 is 2×10 14 cm -3 , the thickness o...
Embodiment 2
[0071] Step 1. First select a 6H-SiC single crystal substrate, and then epitaxially grow silicon carbide N buffer layer 1, silicon carbide P+ buffer layer 2, silicon carbide P long base region 3, and silicon carbide N- low-doped silicon carbide substrate on the substrate surface. Region 4, silicon carbide N highly doped region 5 and silicon carbide P+ emitter region 6, the thickness of the 4H-SiC single crystal substrate is 320 μm;
[0072] The doping concentration of silicon carbide N buffer layer 1 is 2x10 18 cm -3 , the thickness of SiC N buffer layer 1 is 1.0 μm, and the doping concentration of SiC P+ buffer layer 2 is 2.5x10 17 cm -3 , the thickness of the silicon carbide P+ buffer layer 2 is 2.2 μm, and the doping concentration of the silicon carbide P long base region 3 is 2.x10 14 cm -3 , the thickness of the silicon carbide P long base region 3 is 161 μm, and the doping concentration of the silicon carbide N-lowly doped region 4 is 2.5×10 14 cm -3 , the thicknes...
Embodiment 3
[0081] Step 1. First select a 4H-SiC single crystal substrate, and then epitaxially grow silicon carbide N buffer layer 1, silicon carbide P+ buffer layer 2, silicon carbide P long base region 3, and silicon carbide N- low-doped silicon carbide substrate on the substrate surface. Region 4, silicon carbide N highly doped region 5 and silicon carbide P+ emitter region 6, the thickness of the 4H-SiC single crystal substrate is 330 μm;
[0082] The doping concentration of silicon carbide N buffer layer 1 is 3x10 18 cm -3 , the thickness of SiC N buffer layer 1 is 1.2 μm, and the doping concentration of SiC P+ buffer layer 2 is 3x10 17 cm -3 , the thickness of the silicon carbide P+ buffer layer 2 is 2.5 μm, and the doping concentration of the silicon carbide P long base region 3 is 1.4×10 14 cm -3 , the thickness of the silicon carbide P long base region 3 is 163 μm, and the doping concentration of the silicon carbide N-lowly doped region 4 is 3×10 14 cm -3 , the thickness o...
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