Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Monocrystalline silicon wafer, preparation method thereof and cutting method for battery piece

A monocrystalline silicon wafer and manufacturing method technology, applied in the field of solar cells, can solve the problems of low utilization rate of monocrystalline silicon rods, waste of monocrystalline silicon rod materials, and high cost of monocrystalline silicon wafers, so as to reduce leftover materials and improve utilization ratio , cost-saving effect

Active Publication Date: 2019-06-11
JINKO SOLAR CO LTD +1
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing monocrystalline silicon wafers are all squares with chamfers, and the utilization rate of the monocrystalline silicon rods produced by this kind of monocrystalline silicon wafers is low, resulting in waste of single crystal silicon rod materials, which in turn leads to the loss of single crystal silicon wafers. higher cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Monocrystalline silicon wafer, preparation method thereof and cutting method for battery piece
  • Monocrystalline silicon wafer, preparation method thereof and cutting method for battery piece
  • Monocrystalline silicon wafer, preparation method thereof and cutting method for battery piece

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to enable those skilled in the art to better understand the solution of the present application, the present application will be further described in detail below in conjunction with the drawings and specific implementation methods. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0037] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed bel...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a monocrystalline silicon wafer. A front face of the monocrystalline silicon wafer is an irregular octagon. A distance from a first vertex to a second vertex of the irregular octagon is one third of the distance from a third vertex to a fourth vertex of the irregular octagon. The second vertex and the third vertex are adjacent vertexes of the first vertex. The fourth vertexis the adjacent vertex of the second vertex. Each inner angle of the irregular octagon is 135 degrees. According to the monocrystalline silicon wafer, the front face is the irregular octagon, so waste leftover materials of a monocrystalline silicon rod are greatly reduced, a utilization rate of the monocrystalline silicon rod is improved, and cost is reduced. The invention also provides a preparation method for the monocrystalline silicon wafer with the advantages, a cutting method for a battery piece prepared by the monocrystalline silicon wafer, and a solar cell module.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a monocrystalline silicon wafer and a manufacturing method thereof, a cutting method of a solar cell, and a solar cell module. Background technique [0002] Monocrystalline silicon wafer is a good semiconductor material, used to make semiconductor devices, solar cells, etc. [0003] Existing monocrystalline silicon wafers are all squares with chamfers, and the utilization rate of the monocrystalline silicon rods produced by this kind of monocrystalline silicon wafers is low, resulting in waste of single crystal silicon rod materials, which in turn leads to the loss of single crystal silicon wafers. The cost is higher. Contents of the invention [0004] The purpose of this application is to provide a single crystal silicon wafer to improve the utilization rate of single crystal silicon rods. [0005] In order to solve the above technical problems, the present app...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18B28D5/00
CPCY02P70/50
Inventor 白枭龙张涛欧子扬晏文勇何丽珠金浩邓清香
Owner JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products