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Light emitting diode chip and preparation method thereof

A light-emitting diode and chip technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limited luminous efficiency and low luminous efficiency, and achieve the effect of improving luminous efficiency and luminous angle

Inactive Publication Date: 2019-06-11
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, the structure of the light-emitting diode chip includes a vertical structure and a horizontal structure, and the vertical structure includes a positive polarity light-emitting diode and a reverse polarity light-emitting diode, and the light-emitting brightness of the reverse polarity diode is higher than that of the positive polarity diode. It includes N-type electrode layer, N-type layer, active layer P-type layer and reflective layer from top to bottom. In order to improve the luminous efficiency of light-emitting diodes, the prior art generally improves the luminous efficiency by roughening the N-type layer on the light-emitting surface, but Both the light generated by the active layer and directed towards the N-type layer and the light directed towards the P-type layer reflected by the reflective layer are blocked under the N electrode and finally absorbed by its own material, which limits the luminous efficiency and makes it difficult to further improve
[0004] In summary, the reverse polarity diode chip in the prior art has the problem of low luminous efficiency

Method used

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  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof
  • Light emitting diode chip and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0074] Embodiment 1 of the present application provides a light emitting diode chip, such as figure 1 As shown, it includes: a permanent substrate 10, a P-type electrode layer 11 located under the permanent substrate 10, a bonding layer 12, a specular reflection layer 13, a P-type layer 14, and an active layer 15 located on the permanent substrate 10 in sequence , N-type layer 16 and N-type electrode layer 17.

[0075] The N-type layer 16 includes an ohmic contact layer 161 in contact with the N-type electrode layer 17 and an N-type roughened layer 162. The N-type roughened layer 162 includes a first contact layer 1621 in contact with the ohmic contact layer 161 and the N-type electrode layer 17 And the first roughened layer 1622 located under the ohmic contact layer and exposed outside the N-type electrode layer 17.

[0076] The contact between the P-type layer 14 and the specular reflection layer 13 includes a second roughened layer 141 located under the N-type electrode layer 17...

Embodiment 2

[0100] Example 2 of the present application provides a method for preparing a light-emitting diode chip, which is used to prepare the light-emitting diode as in Example 1, such as Figure 4 As shown, it specifically includes the following steps S401 to S40:

[0101] S401, forming an etching stop layer, an N-type layer, an active layer, and a P-type layer in sequence on a temporary substrate, where the N-type layer includes an ohmic contact layer and an N-type roughened layer.

[0102] S402, etching a second roughened layer in a predetermined area on the P-type layer, so that the P-type layer forms a second roughened layer with a set cross-sectional area and a non-roughened layer located outside the second roughened layer.

[0103] S403, forming a specular reflection layer matching the roughening layer on the P-type layer on which the second roughening layer is etched, and forming a bonding layer on the specular reflection layer.

[0104] S404, bonding the bonding layer to the permanent...

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Abstract

Embodiments of the invention provide a light emitting diode chip and a preparation method thereof. The light emitting diode chip comprises a permanent substrate, a P-type electrode layer located underthe permanent substrate, and a bonding layer, a mirror surface reflection layer, a P-type layer, an active layer, an N-type layer and an N-type electrode layer located on the permanent substrate in sequence; the N-type layer comprises an ohmic contact layer and an N-type coarsening layer which are in contact with the N-type electrode layer; the N-type coarsening layer comprises a first contact layer in contact with the ohmic contact layer and the N-type electrode layer, and a first coarsening layer located below the ohmic contact layer and exposed out of the N-type electrode layer; and a second coarsening layer located below the N-type electrode layer and a non-coarsening layer located outside the second coarsening layer are arranged in the contact position of the P-type layer and the mirror surface reflection layer. According to the embodiments of the invention, the light-emitting efficiency of the reversed-polarity light-emitting diode is improved.

Description

Technical field [0001] This application relates to the field of semiconductor light emitting technology, and specifically to a light emitting diode chip and a preparation method thereof. Background technique [0002] The light-emitting principle of light-emitting diodes (LED) is to use the energy difference between electrons moving between n-type semiconductor and p-type semiconductor to release energy in the form of light. This light-emitting principle is different from the light-emitting principle of incandescent lamp heating. Called cold light source. In addition, light-emitting diodes have the advantages of high durability, long life, light weight, and low power consumption. Therefore, the current lighting market places high expectations on light-emitting diodes and regards them as a new generation of lighting tools. [0003] In the prior art, the structure of the light-emitting diode chip includes a vertical structure and a horizontal structure. The vertical structure include...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/38H01L33/22H01L33/00
Inventor 石峰王洪占王涛
Owner YANGZHOU CHANGELIGHT