6 results about "Reversed polarity" patented technology

The invention provides a high-power high-reliability voltage retainer used for an automobile starting and stopping system. The high-power high-reliability voltage retainer is higher in power and reliability and smaller in size and ripple. The high-power high-reliability voltage retainer comprises a through circuit module (1), a booster circuit module (2), a reversed polarity circuit module (3), a CAN transceiver (4), a CPU (5), a DSP (digital signal processor) (6) and a battery. A battery input port and a battery output port are formed in the through circuit module (1), a battery input port and a battery output port are formed in the booster circuit module (2), and the reversed polarity circuit module (3) is electrically connected with the booster circuit module (2); the CAN transceiver (4), the CPU (5) and the DSP (6) are sequentially and electrically connected; the CPU (5) is electrically connected with the through circuit module (1), and the DSP (6) is electrically connected with the through circuit module (1); the DSP (6) is electrically connected with the booster circuit module (2).

The invention relates to a differential Mach-Zehnder electro-optical modulator based on frequency equalization. The modulator comprises an input waveguide branch, an output waveguide branch, a Mach-Zehnder upper phase shift arm, a Mach-Zehnder lower phase shift arm and a traveling wave electrode, each phase shift arm comprises a basic modulation region, a like-polarity modulation region and a reversed-polarity modulation region which are sequentially connected in series and are spatially arranged in parallel to form a folded arrangement structure; the traveling wave electrode is used for applying a first polarity electric field to the basic modulation area and the homo-polarity modulation area, and applying a second polarity electric field opposite in direction to the reversed polarity modulation area. By adopting the scheme, frequency equalization phase modulation is realized in a compact folding structure, and the electro-optical bandwidth of the modulator can be obviously expanded while the size of the device is reduced.

The invention relates to the technical field of circuit design, in particular to a reversed polarity protection circuit, a switch module and an application circuit thereof. The reverse polarity protection circuit comprises a first NMOS tube MN1, a second NMOS tube MN2, a third NMOS tube MN3, a fourth NMOS tube MN4, a fifth NMOS tube MN5, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a first resistor R1, a second resistor R2, a third resistor R3, a fifth resistor R5, a first PMOS tube MP1 and a second PMOS tube MP2. When a reversed polarity event occurs, the power tube is actively started to form a low-resistance path to replace a body diode for conduction, so that the power consumption is greatly reduced, the gate-source and drain-source voltages of each MOS tube are in a safe range when the circuit is in all working states (normal on / off, inductive load and reversed polarity), the risk of super voltage resistance does not exist, and the circuit can be suitable for standard processes and can be used for large-scale production. And the manufacturing cost and the design complexity are reduced.

The structure comprises a ferroelectric layer having a first polarization (P1) in a first volume (V1) and a second polarization (P2) opposite the first polarization in a second volume (V2) different from the first volume, the first polarization and the second polarization being oriented perpendicular or oblique to the ferroelectric layer, wherein a surface of the first volume (V1) forms a face (Sup) of the ferroelectric layer and the first volume (V1) is interposed between the face of the ferroelectric layer and the second volume (V2), the second volume (V2) having a higher hydrogen concentration, referred to as a polarity reversal concentration, than the first volume (V1), and the polarity reversal concentration ranges from 1019 to 1022 hydrogen atoms per cubic centimeter.

The invention provides a reversed polarity light emitting diode and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises a substrate, a first transparent conductive layer, a dielectric layer, an adhesion layer and an epitaxial layer, wherein the first transparent conductive layer, the dielectric layer, the adhesion layer and the epitaxial layer are sequentially stacked on the substrate; the adhesion between the adhesion layer and the epitaxial layer is greater than the adhesion between the dielectric layer and the epitaxial layer, and the adhesion between the adhesion layer and the dielectric layer is greater than the adhesion between the dielectric layer and the epitaxial layer. The embodiment of the invention can improve the problem that the dielectric layer is easy to fall off from the epitaxial layer.

A method for electrically controlling a functional element with electrically controllable optical properties enclosed in a glazing unit includes controlling the optical properties by a control unit connected to two transparent flat electrodes of the functional element, and applying a voltage by the control unit between the flat electrodes and the polarity of the voltage is periodically changed. The voltage has a trapezoidal profile and by the control unit an increasing electrical voltage is applied for charging the functional element, the electrical voltage increasing to a first peak value, the electrical voltage is reduced from the first peak value to a final voltage for discharging the functional element, the functional element is charged with the increasing electrical voltage with reversed polarity, wherein the electrical voltage increases to a second peak value, the electrical voltage is reduced from the second peak value to the final voltage for discharging the functional element.