Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof

A surface covering and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of affecting the electrical contact between indium tin oxide and n-type semiconductor layers, damaging the MQW active layer, and difficulty in epitaxial growth, etc., to achieve improved The uniformity of current expansion, the improvement of light extraction efficiency, and the effect of eliminating light absorption

Active Publication Date: 2016-06-22
YANGZHOU CHANGELIGHT
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Problems solved by technology

On the one hand, when the bandgap width of the n-plane window layer is required to be wide enough, it will cause difficulties in epitaxial growth; on the other hand, the window layer of indium tin oxide in the form of a cylinder is in direct contact with the n-type semiconductor layer, requiring the window layer The depth of the hole is equal to the thickness of the

Method used

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  • Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof
  • Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof
  • Reversed-polarity AlGaInP-based LED coated with ITO on surface and manufacturing method thereof

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Embodiment Construction

[0035] One, such as figure 1 and 2 Shown is the structural representation of the preferred example of the present invention in the manufacturing process, and the manufacturing steps are as follows:

[0036] 1. If figure 1 As shown, an epitaxial layer is grown on a GaAs temporary substrate 101 by MOCVD equipment, and the epitaxial layer includes a GaAs buffer layer 102, a GaInP cut-off layer 103, an n-GaAs ohmic contact layer 104, an n-AlGaInP confinement layer 105, and an MQW multi-quantum well. Source layer 106 , p-AlGaInP confinement layer 107 , p-GaP window layer 108 .

[0037] Wherein the n-GaAs ohmic contact layer 104 preferably has a thickness of 20nm to 100nm, and a doping concentration of 1×10 19 cm -3 Above, the doping element is Si, so as to form a good ohmic contact with the ohmic contact point 204 .

[0038] The preferred thickness of the p-GaP window layer 108 is 600nm to 8000nm, and the doping concentration is 1×10 18 cm -3 Above, the doping element is Mg ...

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Abstract

The invention provides a reversed-polarity AlGaInP-based LED coated with ITO on the surface and a manufacturing method thereof, belonging to the technical field of semiconductors. Since an ITO extended current extension layer is used to replace an n-type AlGaInP current extension layer, the current extension uniformity of an LED chip can be improved, the problem of light absorption of the n-type AlGaInP current extension layer can be avoided and therefore the light emitting efficiency is increased. Thus, both the service life and the photoelectric conversion efficiency of the reversed-polarity AlGaInP-based LED can be enhanced. The reversed-polarity AlGaInP-based LED coated with ITO on the surface and the manufacturing method thereof provided by the invention have the advantages of simple process and great convenience in production operation.

Description

technical field [0001] The invention relates to a reverse polarity AlGaInP-based LED whose surface is covered with an ITO current spreading layer and a manufacturing method thereof, belonging to the technical field of semiconductors. Background technique [0002] The AlGaInP-based material lattice-matched with the GaAs substrate is a direct bandgap semiconductor. By adjusting the ratio of Al and Ga, the forbidden band width can be varied between 1.9eV and 2.3eV. The wavelength range of AlGaInP-based LEDs can cover 550nm to 650nm, and has broad application prospects in the fields of RGB three-color display screens, traffic lights, and automotive lights. [0003] Conventional AlGaInP-based LED emits light from the p-plane, and its epitaxial layer structure is usually: GaAs buffer layer, DBR mirror layer, n-type confinement layer, MQW multi-quantum well active layer, p-type confinement layer, p-type GaP window layer. Since the GaAs substrate absorbs light, it is necessary to ...

Claims

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Application Information

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IPC IPC(8): H01L33/10H01L33/14H01L33/44H01L33/00
CPCH01L33/0093H01L33/10H01L33/14H01L33/44
Inventor 徐洲杨凯赵宇林鸿亮徐培强何胜李波张永张双翔
Owner YANGZHOU CHANGELIGHT
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