Supercharge Your Innovation With Domain-Expert AI Agents!

Memory system and control method

A technology of a memory system and a control method, applied in the direction of instruments, electrical digital data processing, input/output to record carriers, etc., can solve the problem of limited number of write target blocks, increased write buffers, and difficulty in preparing write buffers device, etc.

Active Publication Date: 2019-06-18
KIOXIA CORP
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009]However, when the number of write target blocks that can be used at the same time increases, it is also necessary to increase the number of temporary storages that should be written to each write target block. The number of write buffers required to write data
In general, the capacity of random access memory in a memory device is limited, so it may be difficult for a memory device to prepare a sufficient number of write buffers
Therefore, in practice, the result is that the number of write target blocks that can be used simultaneously is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory system and control method
  • Memory system and control method
  • Memory system and control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Hereinafter, the embodiment will be described with reference to the drawings.

[0037] First, refer to figure 1 The relationship between the host and the storage system is explained.

[0038] This memory system is a semiconductor memory device configured in such a way that data is written to a nonvolatile memory and data is read from the nonvolatile memory. The memory system is implemented as a flash memory device 3 based on NAND flash memory technology.

[0039] The host (host device) 2 is configured to control a plurality of flash memory devices 3. The host computer 2 is realized by an information processing apparatus configured to use a flash memory array composed of a plurality of flash memory devices 3 as a memory. The information processing device may also be a personal computer or a server computer.

[0040] In addition, the flash memory device 3 can also be used as one of a plurality of memory devices arranged in the memory array. The memory array may also be connect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention provide a memory system and a control method that can increase the number of write target blocks that can be simultaneously utilized. According to one embodiment,a memory system receives, from a host, a write request including a first identifier associated with one write destination block and storage location information indicating a location in a write bufferon a memory of the host in which first data to be written is stored. When the first data is to be written to a nonvolatile memory, the memory system obtains the first data from the write buffer by transmitting a transfer request including the storage location information to the host, transfers the first data to the nonvolatile memory, and writes the first data to the one write destination block.

Description

[0001] [Related Application Case] [0002] This application enjoys priority based on Japanese Patent Application No. 2017-236269 (application date: December 8, 2017). This application contains all the contents of the basic application by referring to the basic application. Technical field [0003] Embodiments of the present invention relate to a memory system including a nonvolatile memory and a control method thereof. Background technique [0004] In recent years, memory systems equipped with non-volatile memories have become widespread. As one of such memory systems, a solid state drive (SSD) based on NAND flash memory technology is well known. [0005] Even in servers in data centers, SSDs are used as storage devices. [0006] Storage devices used in host computer systems such as servers require high I / O (Input / Output) performance. [0007] Therefore, recently, a new interface between the host and the storage device has been proposed. [0008] In addition, in recent memory devices, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/061G06F3/0656G06F3/067G06F3/0679G06F3/0683G06F3/0604G06F3/064G06F3/0659
Inventor 菅野伸一吉田英树
Owner KIOXIA CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More