Solvent, method and application for preparing high-performance metal halide perovskite thin film
Patent Information
- Authority / Receiving Office
- CN ยท China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAN JIAOTONG LIVERPOOL UNIV
- Publication Date
- 2022-03-29
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Abstract
Description
technical field
[0001] The invention relates to a technology in the field of microelectronics, in particular to a solvent, a method and an application for preparing a high-performance metal halide perovskite thin film. Background technique
[0002] In recent years, metal halide perovskite films have attracted worldwide attention due to their excellent optoelectronic properties, low cost, and facile fabrication process. From the initial three-dimensional perovskite structure to the current one-dimensional and two-dimensional perovskite quantum dots, nanowires, nanoplates and other structures with various elemental compositions, the application of perovskite materials has also expanded from solar cells to laser emission. devices, light-emitting diodes, thermoelectric devices, photodetectors, etc. Devices based on perovskite thin films not only have impressive high performance, but also have low cost and simple production and processing technology, so they have great potential...