Solvent and method for preparing high-performance metal halide perovskite film, and application

A metal halide and perovskite technology, applied in the field of microelectronics, can solve the problems of unfavorable development and commercialization of perovskite devices, general quality of perovskite films, and increased production costs, so as to improve quality and device performance, The effect of proper solvent volatility and low cost

Active Publication Date: 2019-06-21
XIAN JIAOTONG LIVERPOOL UNIV
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  • Claims
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Problems solved by technology

The solution one-step process is simple, but the quality of the perovskite film prepared is average. Although other methods do improve the quality and repeatability of the perovskite film, the process is complicated, resulting in a significant increase in production costs, which is not conducive to perovskite devices. development and commercialization of

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  • Solvent and method for preparing high-performance metal halide perovskite film, and application
  • Solvent and method for preparing high-performance metal halide perovskite film, and application
  • Solvent and method for preparing high-performance metal halide perovskite film, and application

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Embodiment 1

[0031] DMF and GBL are two organic solvents with quite different properties. DMF has a relatively low boiling point of 153°C and a relatively high polarity of 6.40D. It has a strong ability to form hydrogen bonds and coordinate with metals. GBL has a relatively high boiling point of 204°C and a relatively low polarity of 4.12D. It can form hydrogen bonds, but its coordination ability with metals is relatively weak. The quality of perovskite films directly depends on the type of solvent, the nature of solvated intermediates, and the interaction between solvents and solvated intermediates, and the above two solvents have defects when preparing perovskite films alone.

[0032] In this example, scanning electron microscopy (SEM) and ultraviolet-visible light spectrum analysis (UV-Vis) were performed on perovskite thin films prepared from perovskite precursor solutions with different solvent ratios. like Figure 1a , Figure 1b and Figure 1c As shown in the scanning electron mi...

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Abstract

The invention discloses a solvent and a method for preparing a high-performance metal halide perovskite film, and an application, and belongs to the technical field of microelectronics. The solvent for preparing the high-performance metal halide perovskite film comprises the following components in parts by volume: 3 parts of DMF and 1-2 parts of GBL. The solvent can effectively control the morphology of the perovskite film, so that the performance, efficiency and stability of a device are improved; and the solvent is used for industrial production and has the characteristics of simple and feasible method, low cost, strong controllability and the like.

Description

technical field [0001] The invention relates to a technology in the field of microelectronics, in particular to a solvent, method and application for preparing a high-performance metal halide perovskite thin film. Background technique [0002] In recent years, metal halide perovskite thin films have attracted worldwide attention due to their excellent photoelectric properties, low cost, and facile preparation process. From the initial three-dimensional perovskite structure to the current one-dimensional and two-dimensional perovskite quantum dots, nanowires, nanoplates and other structures with various elements, the application of perovskite materials has also expanded from solar cells to laser emission. Devices, light-emitting diodes, thermoelectric devices, photodetectors and other aspects. Devices based on perovskite thin films not only have impressive high performance, but also have low cost and simple production and processing technology, so they have great potential f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54H01L51/56H01L51/46H01L51/48H01L35/24H01L35/34
CPCY02E10/549
Inventor 王瑞瑶闫天昊
Owner XIAN JIAOTONG LIVERPOOL UNIV
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