Pixel driving circuit and display panel

Abstract

The invention provides a pixel driving circuit and a display panel. The pixel driving circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor and a storage capacitor. The invention provides the pixel driving circuit. When a third driving signal is started, the grid electrode and the drain electrode of the fourth transistor are connected through the fifth transistor; therefore, the drain electrode of the fourth transistor loads the first power supply signal together with the threshold voltage of the fourth transistor to the first end of the storage capacitor so as to offset the threshold voltage of the fourth transistor, so that the threshold voltage change of the fourth transistor can be compensated, the light-emitting uniformity of the light-emitting device is improved, and the image quality is improved.

Description

Technical field [0001] This application relates to the field of display technology, in particular to a pixel drive circuit and a display panel. Background technique [0002] In the prior art, most of the transistors in the pixel driving circuit are low-temperature polysilicon thin film transistors or oxide thin film transistors. Compared with general amorphous silicon thin film transistors, low-temperature polysilicon thin film transistors and oxide thin film transistors have higher mobility and more stable characteristics, and are more suitable for active-matrix organic light-emitting diodes (Active-matrix organic light-emitting diodes). diode, AMOLED) is displaying. [0003] However, due to the limitations of the crystallization process, low-temperature polysilicon thin film transistors fabricated on large-area glass substrates often have non-uniformities in electrical parameters such as threshold voltage and mobility. This non-uniformity will be transformed into a difference i...

AI Technical Summary

Problems solved by technology

Although oxide thin film transistors have better process uniformity, similar to amorphous silicon thin film transistors, their threshold voltage will drift under long-term pressure and high temperature, resulting in different display screens. Different threshold shifts will cause differences in display brightness

This difference is related to the previously displayed image, so it often appears as an afterimage phenomenon

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