Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solid state disk error correction method and related device

A technology of solid-state hard disk and error correction method, applied in the computer field, can solve the problems of high performance overhead, reduce the life of solid-state hard disk, affect data operation, etc., to reduce consumption, avoid excessive use of data moving operations, and avoid reading data errors. Effect

Pending Publication Date: 2019-07-09
SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the prior art, the performance overhead consumed by data migration is relatively large. As long as the state of the data block storing the data reaches a certain threshold, the data migration operation is directly performed.
However, if the server is performing other data operations at this time, it will seriously affect the normal data operations
In addition, solid-state drives have data read and write life spans. If there are too many data movement operations, the lifespan of solid-state drives will be reduced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid state disk error correction method and related device
  • Solid state disk error correction method and related device
  • Solid state disk error correction method and related device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] The core of this application is to provide a solid-state hard disk error correction method, a solid-state hard disk error correction device, a storage device, and a computer-readable storage medium. The reference voltage of the read operation is modified through the simulated optimal voltage offset, thereby correcting the Read errors that occur when reading data, avoid excessive use of data movement operations, reduce system performance consumption, and improve performance utilization.

[0048] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other emb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a solid state disk error correction method, which comprises the following steps: reading state information of a data block, and calculating data writing duration according to the state information; when the data writing duration is greater than a first preset duration, carrying out data transfer operation on the data block; when the data writing time length is smaller thanor equal to the first preset time length and larger than the second preset time length, determining the optimal voltage offset according to the result of the analog reading operation, modifying the reference voltage of the reading operation is modified according to the optimal voltage offset, and therefore when the data of the data block is read, carrying out reading operation according to the optimal voltage offset. The reference voltage of the reading operation is modified through the simulated optimal voltage offset, so that the reading error occurring when the data is read is corrected, the excessive use of the data transfer operation is avoided. The consumption of the system performance is reduced, and the performance utilization rate is improved. The invention further discloses a solid state disk error correction device, a storage device and a computer readable storage medium which have the above beneficial effects.

Description

technical field [0001] The present application relates to the field of computer technology, and in particular to a solid state disk error correction method, a solid state disk error correction device, a storage device, and a computer-readable storage medium. Background technique [0002] With the continuous development of information technology, various storage technologies have emerged. The solid-state hard disk with NAND particles as the storage medium is one of the storage technologies, which is low in cost and is often used for large-scale data storage. However, due to the electrical characteristics of NAND particles, there will be varying degrees of storage data error problems. Specifically, the higher the number of PEs, the higher the probability of reading errors. The higher the number of readings, the higher the probability of errors. In addition, the longer the data is stored in a fixed position, the higher the probability of data reading errors. high. Moreover, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10G11C7/10
CPCG06F11/1008G11C7/10
Inventor 吕玉彬戚勇
Owner SUZHOU LANGCHAO INTELLIGENT TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products