Flow control method and device, and reaction chamber

A flow control and flow technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as loss and scrapping of the whole furnace, and achieve the effect of improving control accuracy

Active Publication Date: 2019-07-16
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Once the staff makes mistakes, it will cause the whole furnace to be scrapped and cause great losses.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flow control method and device, and reaction chamber
  • Flow control method and device, and reaction chamber
  • Flow control method and device, and reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0059]In order to enable those skilled in the art to better understand the technical solution of the present invention, the flow control method, device, and reaction chamber provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0060] The flow control method and device provided by the present invention are applied to multi-chamber equipment, for example, multi-chamber CVD equipment, that is, CVD equipment in which a host computer controls multiple process chambers.

[0061] The flow control method is used to adjust the flow of the common fluid that the common flow path passes into at least one process chamber where the process is performed by controlling the first control unit. The so-called public fluid refers to the gas or liquid required for CVD epitaxy, including N 2 、H 2 , doping gas, etc. Specifically, as figure 1 As shown, the flow control method includes:

[0062] S11, sending a process enabling signal to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a flow control method and device, and a reaction chamber. By sending a process enable signal to a second control unit of one process chamber, and enabling the second control unit to be networked with a first control unit according to the process enable signal, a target flow value can be sent to the first control unit through the second control unit, so that the first controlunit is automatically controlled to adjust the flow of a common fluid charged into at least one process chamber carrying out a process through a common flow channel to reach the target flow value, without the need of manual configuration, and then the control accuracy is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a flow control method and device, and a reaction chamber. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, hereinafter referred to as CVD) epitaxy is a vapor phase epitaxial growth technology that deposits a solid film on the surface of a substrate by means of a space gas phase chemical reaction. Good advantage, the CVD method is currently the main method for silicon epitaxial growth. The current CVD silicon epitaxial equipment mainly has two types: multi-chip and single-chip. For single-chip CVD equipment, multi-chamber equipment with multiple process chambers can achieve higher wafer yields compared with single-chamber equipment. Equipment will have a larger market. [0003] A single-chip multi-chamber CVD equipment provided by the prior art, the CVD equipment includes a flow control device, which adopts the i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/52
CPCC23C16/52
Inventor 陈路路
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap