Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Elementary cell comprising resistive memory and selection element, level and matrix of levels comprising plurality of such cells and associated method of fabrication

A random access memory, basic unit technology, applied in electrical components, electrical solid state devices, circuits, etc., can solve problems such as difficulties in this situation

Pending Publication Date: 2019-07-19
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
View PDF1 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is especially difficult when using diodes in series with PCRAM phase-change cells that require significant switching current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Elementary cell comprising resistive memory and selection element, level and matrix of levels comprising plurality of such cells and associated method of fabrication
  • Elementary cell comprising resistive memory and selection element, level and matrix of levels comprising plurality of such cells and associated method of fabrication
  • Elementary cell comprising resistive memory and selection element, level and matrix of levels comprising plurality of such cells and associated method of fabrication

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0110] Unless otherwise stated, identical elements appearing in different figures have a single reference number.

[0111] Figure 1 to Figure 3 Reference has been made to the prior art description.

[0112] Figure 4 The first aspect of the invention shown in FIG. 2 concerns a base cell 500 capable of addressing a non-volatile resistive random access memory 510 when the base cell 500 is integrated in a cross-bar architecture.

[0113] The base unit 500 includes:

[0114] - a layer of conductive material for the upper electrode 509 of the RRAM;

[0115] - a layer made of a first active material, called memory active layer 508;

[0116] - a one-piece conductor element 504 comprising:

[0117] · the first branch 504a forming the lower electrode of the RRAM 510;

[0118] · the second branch 504b forming the upper electrode of the selector means 511;

[0119] - a one-piece selector element 503 comprising:

[0120] · first branch 503a;

[0121] A layer made of a second act...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an elementary cell including a non-volatile resistive random-access memory mounted in series with a volatile selector device, wherein the memory includes an upper electrode, alower electrode and a layer made of a first active material, designated memory active layer. The selector device includes an upper electrode, a lower electrode and a layer made of a second active material, designated selector active layer. The cell includes a one-piece conductor element including a first branch having one face in contact with the lower surface of the memory active layer in orderto form the lower electrode of the memory, a second branch having one face in contact with the upper surface of the selector active layer in order to form the lower electrode of the memory.

Description

technical field [0001] The technical field of the invention is non-volatile resistive random access memory. [0002] The invention relates to a basic cell comprising a resistive random access memory and a selector, a stage comprising a plurality of said cells and a matrix comprising a plurality of said stages. The invention also relates to a manufacturing method for obtaining said stage and said matrix. Background technique [0003] For applications that need to store information even when the voltage is switched off, EEPROM or FLASH type non-volatile memory, which stores charge on the floating gate of a field-effect transistor, is typically used. However, these memories have disadvantages as follows: [0004] - long write times (a few microseconds), [0005] - Limited density, since the reduction in transistor size leads to a reduction in the read signal, that is to say a reduction in the difference between the two states of a memory point, and a reduction in the duratio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L27/105H01L27/115H01L45/00H10B69/00
CPCH01L27/0203H01L27/0207H01L27/105H10N70/801H10N70/20H10N70/011H10B69/00H10B63/24H10B63/20H10B63/84H10N70/841H10N70/231H10N70/8825H10N70/8828H10N70/826H10B63/80H10N70/24H10N70/063H10N70/066H10N70/245H10N70/821H10N70/884
Inventor 加布里尔·纳瓦罗
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com