Laser annealing equipment and laser annealing method
A laser annealing and equipment technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as substrate damage and sudden temperature changes, and achieve the effect of improving heating efficiency, reducing annealing time, and improving processing efficiency
Active Publication Date: 2019-07-23
YUNGU GUAN TECH CO LTD
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Problems solved by technology
[0003] However, the laser irradiation annealing treatment of amorphous silicon directly in the process chamber, due to the high laser temperature, the substrate temperature changes suddenly, which is easy to cause damage to the substrate
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[0027] Features and exemplary embodiments of various aspects of the invention will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some of these specific details. The following description of the embodiments is only to provide a better understanding of the present invention by showing examples of the present invention. In the drawings and the following description, at least some well-known structures and techniques have not been shown in order to avoid unnecessarily obscuring the present invention; and, for clarity, the dimensions of some structures may have been exaggerated. Furthermore, the features, structures, or characteristics described hereinafter may be combined in any suitable manner in one or more embodiments.
[0028] The orient...
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The invention discloses laser annealing equipment and laser annealing method. The laser annealing equipment comprises a communication pre-heating cavity and a process cavity, wherein a first heating mechanism is arranged in the pre-heating cavity and is provided with a plurality of first heating regions, the thermal radiation capability of the plurality of first heating regions are in gradient distribution from an inlet of the pre-heating cavity and an inlet of the process cavity and is in a raising trend, a laser processing part is arranged in the process cavity, and a to-be-processed substrate is laser-annealed by the laser processing part. In the laser annealing equipment disclosed by the invention, the first heating mechanism in the pre-heating cavity can be used for pre-processing thesubstrate, damage to the substrate by an abruptly-changing temperature is prevented, the to-be-processed substrate enters the process cavity for laser annealing after the temperature of the to-be-processed substrate is raised in the pre-heating cavity, the annealing time can be reduced, and the laser annealing processing efficiency is improved.
Description
technical field [0001] The invention belongs to the field of display technology, in particular to a laser annealing device and a laser annealing method. Background technique [0002] ELA (Excimer Laser Annealing, excimer laser annealing) refers to irradiating amorphous silicon with an excimer laser to realize the transformation of amorphous silicon into polysilicon. The ELA process is currently the mainstream technology for preparing low-temperature polysilicon thin film transistor display panels. Excimer lasers are used to irradiate a substrate with an amorphous silicon structure to transform it into a substrate with a polysilicon structure at high temperature. [0003] However, if the amorphous silicon is irradiated with laser and annealed directly in the process chamber, since the laser temperature is high, the temperature of the substrate changes suddenly, which is easy to cause damage to the substrate. Contents of the invention [0004] Embodiments of the present inv...
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Login to View More IPC IPC(8): H01L21/67H01L21/268
CPCH01L21/268H01L21/67115
Inventor 赵新宇赵长征王森徐杨
Owner YUNGU GUAN TECH CO LTD