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Graphite base

A technology of graphite base and annular groove, which is applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of different degrees of thermal expansion, inconsistent crystal quality of LED epitaxial wafers, etc., to ensure consistent temperature and improve The effect of uniformity

Active Publication Date: 2020-12-22
HC SEMITEK ZHEJIANG CO LTD
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  • Claims
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Problems solved by technology

[0008] The embodiment of the present invention provides a graphite base, which can solve the problem that the thermal expansion of the upper and lower surfaces of the graphite base is different in the prior art, resulting in inconsistent crystal quality of the LED epitaxial wafer formed on the edge and center of the graphite base.

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Embodiment Construction

[0027] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] An embodiment of the present invention provides a graphite base. figure 1 A schematic structural view of a graphite base provided by an embodiment of the present invention, figure 2 A top view of a graphite base provided by an embodiment of the present invention, image 3 A bottom view of a graphite base provided by an embodiment of the present invention. see Figure 1 ~ Figure 3 , the graphite base 100 is a disk-shaped structure, the surface of the disk-shaped structure includes a first circular end face 110 and a second circular end face 120 parallel to each other, and a connecting first circular end face 110 and a second circular end face 120 on the side 130 .

[0029] In this embodiment, the first circular end surface 1...

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Abstract

The invention discloses a graphite base, and belongs to the technical field of semiconductors. The graphite base is of a disc structure, multiple round grooves used for containing epitaxial wafers andat least one first annular groove are formed in the first round end face of the graphite base, at least one second annular groove is formed in the second round end face of the graphite base, the circle centers of all round grooves in the first round end face is located on at least two concentric circles, the circle centers of the at least two concentric circles, the circle center of at least onefirst annular groove and the circle center of the first round end face coincide, the circle center of at least one second annular groove coincides with the circle center of the second round end face,and the total volume of at least one second annular groove is larger than the total volume of at least one first annular groove. Stress generated by heat expansion of the same surface of the graphitebase can be evenly released, meanwhile, the stress difference generated by heat expansion of the two round end faces of the graphite base can be compensated for at the same time, the phenomenon that under the stress effect, the graphite base becomes the concave shape can be effectively avoided, and the uniformity of the epitaxial wafers formed by the graphite base can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a graphite base. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, and environmental protection, and is widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LEDs to realize semiconductor solid-state lighting is expected to become a new generation of light sources and enter thousands of households, causing a revolution in the history of human lighting. [0003] When making LEDs, first epitaxially grow semiconductor crystal materials on the substrate to form LED epitaxial wafers; then set electrodes on the LED epitaxial wafers, and cut the LED epitaxial wafers to obtain at least two mutually independent LED chips; finally L...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458
CPCC23C16/4581
Inventor 胡任浩丁杰周飚胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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