A sensor structure and its preparation method, strain monitoring method and device

A sensor and wave structure technology, applied in the field of sensors, can solve the problems of inability to monitor small-sized objects, limit the application of strain sensors, and large size

Active Publication Date: 2021-04-27
HEFEI BOE OPTOELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the tension sensor in the prior art has a large size and is not easy to carry
In summary, the strain sensors in the prior art cannot monitor tiny objects, which limits the application of strain sensors

Method used

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  • A sensor structure and its preparation method, strain monitoring method and device
  • A sensor structure and its preparation method, strain monitoring method and device
  • A sensor structure and its preparation method, strain monitoring method and device

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Embodiment Construction

[0039] The embodiment of the present application provides a sensor structure, such as figure 1 As shown, the sensor structure includes: a conductive elastic layer 1, a nanowire electrode 2 attached to the conductive elastic layer 1, a luminescent functional layer 3 located on the nanowire electrode 2, and a luminescent functional layer 3 located on the luminescent functional layer. Flexible electrode 4 on top of layer 3.

[0040] The sensor structure provided by the embodiment of the present application includes an OLED device composed of a nanowire electrode attached to the conductive elastic layer, a light-emitting functional layer, and a flexible electrode. Since the nanowire electrode is attached to the conductive elastic layer, the tensile strain Under the action, the spreading degree and arrangement of the nanowires will change, and then the surface resistance of the electrode will change, and the current of the sensor structure will change accordingly. The parameters o...

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Abstract

The application discloses a sensor structure and a preparation method thereof, a strain monitoring method and a device for monitoring the strain of an object. A sensor structure provided by an embodiment of the present application, the sensor structure includes: a conductive elastic layer, a nanowire electrode attached to the conductive elastic layer, a light-emitting functional layer located on the nanowire electrode, and a The flexible electrode above the light-emitting functional layer.

Description

technical field [0001] The present application relates to the technical field of sensors, in particular to a sensor structure and a preparation method thereof, and a strain monitoring method and device. Background technique [0002] The environment such as industrial automatic control needs to monitor the tensile strain, and it is necessary to use the strain sensor to measure the strain generated by the tensile deformation of the object. However, the tension sensor in the prior art has a large size and is not easy to carry. To sum up, the strain sensors in the prior art cannot monitor micro-sized objects, which limits the application of the strain sensors. Contents of the invention [0003] Embodiments of the present application provide a sensor structure and a manufacturing method thereof, and a strain monitoring method and device for monitoring the strain of an object. [0004] A sensor structure provided by an embodiment of the present application, the sensor structur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01B7/16G01B11/16
CPCG01B7/18G01B11/16
Inventor 胡静王书锋石跃
Owner HEFEI BOE OPTOELECTRONICS TECH
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