A closed-loop multi-level anti-single event flipping effect storage system and implementation method

Abstract

The invention discloses a closed-loop multi-level anti-single-event overturning effect storage system, comprising a CPU, an FPGA and a memory. The CPU sends a memory read instruction or a memory write instruction to the FPGA, and the FPGA parses the received instructions. The operation of reading data from the corresponding address of the memory and writing it to the CPU or reading data from the corresponding address space of the CPU and writing it to the memory. At the same time, the invention discloses an implementation method of the storage system. In the present invention, the data inflow and outflow channel error correction paths between the CPU, the FPGA and the memory are closed loop, the data operation path is short, the operation speed is fast, and the FPGA program is implemented with three-mode redundancy, which ensures that even if the three sets of data written into the memory are all wrong, the It can be corrected back, effectively improving the ability of the storage system to resist single-event flipping.

Description

technical field [0001] The invention belongs to the technical field of environmental anti-radiation, in particular to a closed-loop multi-level anti-single-event overturning effect storage system based on FPGA and an implementation method. Background technique [0002] When space high-energy particles are injected into the sensitive area of ​​a semiconductor device, the phenomenon of device logic state inversion, that is, single-particle inversion, often occurs. With the increase of the integration scale of semiconductor chips, the probability of single-event flipping of semiconductor devices in complex electromagnetic environments is increasing. When the logic state of the device is flipped, it will cause the system operating state to change, and it will cause catastrophic consequences such as casualties and mission failures. [0003] The current methods for resisting single event effects of memory mainly include two aspects: process and design. The use of a special anti-...

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Problems solved by technology

However, these methods often have problems such as single error correction methods, one-sided error correction objects, and open-loop error correction paths. There is still room for further improvement in the effect of its anti-single event flipping effect.

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