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A kind of semiconductor device and its preparation method

A technology for semiconductors and devices, applied in the field of semiconductor devices and their preparation, can solve problems such as inaccurate test results of gold ball thrust, and achieve the effect of accurate test results

Active Publication Date: 2020-04-28
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a semiconductor device with a photosensitive protective layer of a specific shape and its preparation method, which can overcome the problem of inaccurate gold ball thrust test results in the semiconductor device packaging process

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  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method
  • A kind of semiconductor device and its preparation method

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Embodiment Construction

[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0029] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The invention provides a method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor structure including a core device region and a metal bonding pad formed on the core device region; covering the surface of the semiconductor structure with a first passivation layer, a second passivation layer, and a photosensitive protective layer; removing at least a part ofthe photosensitive protective layer, the first passivation layer, and the second passivation layer by using a first mask to form an opening that is in communication with the metal bonding pad, wherein the first mask has alternate light-transmissive regions and light-shielding regions, the formed opening is a stepped opening, and the transition surfaces of the step is a curved surface.

Description

technical field [0001] The invention mainly relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] With the rapid progress of the electronic industry and the increase of user demands, electronic devices are becoming more and more miniaturized and multifunctional. Correspondingly, the package size requirements for semiconductor devices are also getting smaller and smaller. Generally, the process of packaging semiconductor chips is divided into processes such as front-end, middle-end, electroplating, back-end, and testing. In the back-end process (Back-End-Of-Line, BEOL) of the semiconductor device, an inter-metal dielectric layer and a metal pad (PAD) are fabricated on the top layer of the semiconductor device. The inter-metal dielectric layer is usually silicon oxide, and the metal pads are usually aluminum pads. The metal pads then serve as connection points for package ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311
CPCH01L21/31144
Inventor 王永庆陈赫董金文华子群马瑞
Owner YANGTZE MEMORY TECH CO LTD