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Method for Obtaining the Limit Value of Etching Depth

A technology of etching depth and limit value, which is applied in the field of microelectronics, can solve problems such as increased cost and inability to obtain test results, and achieve the effects of automation, low cost and wide application range

Active Publication Date: 2020-06-19
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, obtaining the ultimate etch depth requires a wafer-by-wafer process, which greatly increases cost and may not be available for test results

Method used

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  • Method for Obtaining the Limit Value of Etching Depth
  • Method for Obtaining the Limit Value of Etching Depth
  • Method for Obtaining the Limit Value of Etching Depth

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Embodiment Construction

[0039] In order for those skilled in the art to better understand the technical solution of the present invention, the method for obtaining the etching depth limit value provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0040] see figure 1 , the method for obtaining the etching depth limit value provided by the embodiment of the present invention, which includes the following steps:

[0041] S1, input at least three sets of data, each set of data includes the value of etching depth and the corresponding number of process cycles;

[0042] S2, calculating the average etch rate in each set of data, the average etch rate is the ratio of the value of the etch depth to the number of process cycles;

[0043] S3, using a linear fitting method to fit a linear equation for the relationship between the average etching rate and the number of process cycles;

[0044] S4, obtaining a quadratic curve of the relationship bet...

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Abstract

The present invention provides a method for obtaining an etching depth limit value, comprising the following steps: S1, inputting at least three sets of data, each set of data comprising an etching depth value and a corresponding number of process cycles; S2, calculating an average etching rate in each set of data, the average etching rate being a ratio of the etching depth value to the number of process cycles; S3, performing fitting with a fitting method to obtain a relation between the average etching rate and the process cycle; and S4, obtaining a relation between etching depth and the number of process cycles according to the relation between the average etching rate and the process cycle, and calculating an etching depth limit value on the basis of the relation between the etching depth and the number of process cycles. According to the method for obtaining an etching depth limit value provided in the present invention, the etching depth limit value can be obtained through less tests, so that the method can be simplified and the costs can be lowered.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for obtaining a limit value of etching depth. Background technique [0002] Deep silicon etching has extensive and important applications in the microelectronics industry. For example, in the field of integrated circuit manufacturing, it is necessary to make a deep silicon etching via structure in the interlayer film between two layers of interconnected metal lines, and in this via The hole is filled with interconnection metal to connect the transistor into a device circuit with a certain function; and in the field of packaging, TSV (Through Silicon Vias) technology is still the best way to improve device performance, reduce power consumption and reduce device volume. Mainstream packaging method. [0003] Deep silicon etching is usually obtained by etching. Due to its large aspect ratio, traditional wet etching is difficult to complete, and dry etching must be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G06F17/11
CPCG06F17/11H01L22/12H01L22/20
Inventor 林源为
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD