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Bismuth vanadate composite photoanode protected by polyimide and preparation method thereof

A technology of polyimide and polyimide precursor, which is applied in the field of polyimide-protected bismuth vanadate composite photoanode and its preparation, which can solve the problems of easy decomposition, poor stability of co-catalyst, and obstruction of holes and water contact and other problems, to achieve the effect of high photocurrent density, good stability, and improve photoelectric conversion efficiency

Active Publication Date: 2021-05-25
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cocatalyst is usually less stable and is easy to decompose during the reaction process. In addition, the protective layer also hinders the contact between holes and water, inhibiting the water oxidation reaction.

Method used

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  • Bismuth vanadate composite photoanode protected by polyimide and preparation method thereof
  • Bismuth vanadate composite photoanode protected by polyimide and preparation method thereof
  • Bismuth vanadate composite photoanode protected by polyimide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix , to prepare the seed layer precursor solution, put the FTO conductive glass on the spin coater, take the seed layer precursor solution for spin coating, spin coating for 3 times, keep it at 500°C for 10 min after each spin coating, and finally spin the The coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;

[0029] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bismuth nitrate...

Embodiment 2

[0032] (1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix , to prepare the seed layer precursor solution, put the FTO conductive glass on the spin coater, take the seed layer precursor solution for spin coating, spin coating for 3 times, keep it at 500°C for 10 min after each spin coating, and finally spin the The coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;

[0033] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bismuth nitrate...

Embodiment 3

[0036](1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix , to prepare the seed layer precursor solution, put the FTO conductive glass on the spin coater, take the seed layer precursor solution for spin coating, spin coating for 3 times, keep it at 500°C for 10 min after each spin coating, and finally spin the The coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;

[0037] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bismuth nitrate ...

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Abstract

The invention discloses a polyimide-protected bismuth vanadate composite photoanode and a preparation method thereof. The composite film photoanode includes bismuth vanadate nanosheets and polyimide polymerized on the bismuth vanadate nanosheets in situ; The preparation method is to first prepare the bismuth vanadate photoanode, then place the bismuth vanadate photoanode in the polyimide precursor solution for in-situ pre-polymerization, and finally thermally polymerize at high temperature to obtain a polyimide / bismuth vanadate composite film Photoanode. The composite membrane of the invention not only has high water oxidation current density, low oxygen precipitation potential, but also good stability, simple manufacturing method, low cost and strong operability.

Description

technical field [0001] The invention belongs to the field of composite films, in particular to a polyimide-protected bismuth vanadate composite photoanode and a preparation method thereof. Background technique [0002] Since the beginning of the 21st century, energy crisis and environmental pollution have become two major problems that people are facing. Therefore, finding efficient, clean and renewable energy is of great significance to human civilization. Among many clean energy sources, hydrogen energy is considered to be the best choice for future energy due to its renewable, clean and non-polluting, high combustion calorific value and other advantages. At present, industrial hydrogen is mainly produced by extracting from fossil fuels, which will not only cause additional energy loss, but also generate a large amount of greenhouse gases, and will also aggravate the depletion of fossil fuels. Photoelectrocatalytic water splitting has opened up a new way for efficient, cl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/052C25B11/067C25B11/085C25B11/087C25B1/55C25B1/04B01J35/00B01J31/36
CPCB01J31/36B01J35/0033C25B1/04C25B1/55C25B11/051C25B11/091Y02E60/36
Inventor 王涛高斌范晓莉李斌严娟娟姜澄孙志鹏李洋何建平黄现礼
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS