Light-emitting diode driving backplane, manufacturing method thereof, and display device
A technology for light-emitting diodes and driving backplanes, which is applied in transistors, semiconductor/solid-state device components, semiconductor devices, etc., and can solve problems such as transfer process affecting TFT characteristics.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0056] Figure 5 It is a structural schematic diagram of the first embodiment of the LED driving backplane of the present invention. Such as Figure 5 As shown, the main structure of the light-emitting diode driving backplane in this embodiment includes a substrate 10 and a driving structure layer disposed on the substrate 10. The driving structure layer includes a thin film transistor, a second gate and a common electrode, wherein the thin film transistor includes an active layer , a first grid, a source electrode and a drain electrode, and a first metal strip as a stress relief structure. Specifically, the light-emitting diode driving backplane in this embodiment includes:
[0057] base 10;
[0058] a barrier layer 11 disposed on the substrate 10;
[0059] The active layer 12 is disposed on the barrier layer 11 and includes a channel region and doped regions located on both sides of the channel region;
[0060] a first insulating layer 13 covering the active layer 12; ...
no. 2 example
[0087] Figure 14 It is a structural schematic diagram of the second embodiment of the LED driving backplane of the present invention. This embodiment is an extension based on the aforementioned first embodiment, such as Figure 14 As shown, the main structure of the light-emitting diode driving backplane in this embodiment is the same as that of the aforementioned first embodiment, including a substrate 10 and a driving structure layer disposed on the substrate 10, and the driving structure layer includes a thin film transistor, a second gate and a common electrode , wherein the thin film transistor includes an active layer, a first gate, a source electrode and a drain electrode, and also includes a stress relief structure. Different from the aforementioned first embodiment, the stress relief structure of this embodiment is two second metal strips 40, and the two second metal strips 40 are arranged on the first insulating layer 13 and located on the two sides of the first ga...
no. 3 example
[0092] On the basis of the foregoing embodiments and based on the technical concept of the present invention, the stress relief structure of the embodiment of the present invention can also be expanded in many ways. For example, although the above-mentioned first embodiment has been described by setting a first metal strip on both sides of the first gate as an example, if the process conditions permit, the side surfaces of the first gate can also be arranged along the first gate and Two or more first metal strips are sequentially arranged in the direction of the first via hole to further reduce the stress value at the corner of the edge of the first gate by creating multiple stress concentration points at the same time. Similarly, the aforementioned second embodiment can also be extended to two or more first metal strips, and the stress concentration at the edge corners of the first gate can be further eliminated through multiple arches for relieving pressure. As another examp...
PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More