A processing device for third-generation semiconductor materials

Abstract

The present invention relates to the technical field of third-generation semiconductor materials, and in particular to a processing device for third-generation semiconductor materials. Aiming at the problems of low integration and slow conversion speed in the prior art, the following solutions are proposed, including processing The processing table is provided with a corrosion chamber, a cleaning chamber and a drying chamber. The bottom of the processing table is provided with an installation cavity. The installation cavity is provided with a rotating mechanism. The processing table is provided with a rotating The turntable connected by the mechanism, the part of the turntable extends to the corrosion chamber, the cleaning chamber and the drying chamber. The upper end of the turntable is provided with a plurality of placement grooves at equal intervals in the circumferential direction, and three of the placement grooves are respectively located in the corrosion chamber, the cleaning chamber and the drying chamber. In the cleaning chamber and the drying chamber, an corrosion mechanism is installed on the inner top of the corrosion chamber. The invention has a reasonable structure, integrates corrosion cleaning, flushing and drying, has a high degree of integration, and can continuously carry out material feeding and processing.

Description

technical field [0001] The invention relates to the technical field of third-generation semiconductor materials, in particular to a processing device for third-generation semiconductor materials. Background technique [0002] With the continuous expansion of the application field of semiconductor devices, especially in special occasions, semiconductors are required to remain strong in high temperature, strong radiation, high power and other environments. The first and second generation semiconductor materials are powerless, so the third generation of semiconductor materials - wide Bandgap semiconductor materials (bandgap width greater than 2.2ev) have become the focus of attention, mainly including silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAS), zinc oxide (ZnO), diamond, nitride Aluminum (AlN), more mature silicon carbide and gallium nitride are known as the duo of the third-generation semiconductor materials, while the research on zinc oxide, diamond...

AI Technical Summary

Problems solved by technology

[0003] At present, the third-generation semiconductors need to be corroded and cleaned during the processing process. Through the chemical reaction between the chemical solution and the corroded object, the atoms on the surface are removed. Generally, it needs to go through steps such as corrosion cleaning, washing, and drying. The low degree of integration and the slow conversion speed between each step reduce the production efficiency

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