Formation method of semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of reducing the performance of semiconductor devices, low-k dielectric layer damage, etc.
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no. 1 example
[0045] Please refer to figure 1 , the metal connection layer 110 , the capping layer 120 , the low-k dielectric layer 130 , the interlayer dielectric layer 140 and the hard mask layer 150 are sequentially formed on the substrate 100 .
[0046]The substrate 100 serves as a basis for forming subsequent semiconductor devices. The material of the substrate 100 may be undoped single crystal silicon, single crystal silicon doped with impurities, silicon on insulator (SOI) and the like. Specifically, in the embodiment of the present invention, the material of the substrate 100 is undoped single crystal silicon. The substrate 100 may also contain other semiconductor components (not shown).
[0047] The metal connection layer 110 is used to connect different components inside the semiconductor device, or achieve the purpose of connecting semiconductor devices located at different positions, and realize specific functions. The material of the metal connection layer 110 includes a co...
no. 2 example
[0079] Figure 6-Figure 7 It is the process of the second embodiment of the present invention. The difference between the second embodiment and the first embodiment is that after removing the low-k dielectric layer, the spacer, the hard mask layer and the cover layer at the bottom of the connection hole are etched and removed together. Other process steps are consistent with the first embodiment.
[0080] Please refer to Image 6 , from sequentially forming the metal connection layer 210, the capping layer 220, the low-k dielectric layer 230, the interlayer dielectric layer 240 and the hard mask layer 250 on the substrate 200 to the process of forming the spacer 260, the selection of materials, and The functions of each layer are consistent with those of the first embodiment, and will not be repeated here.
[0081] The process of etching the exposed low-k dielectric layer 230 at the bottom of the connection hole 270 to expose the cap layer 220 and the selection of etching p...
no. 3 example
[0088] The difference between the third embodiment and the previous embodiments is that the third embodiment simultaneously removes the low-k dielectric layer and the hard mask layer at the bottom of the connection hole, and then removes the capping layer. Other processes are consistent with the first embodiment.
[0089] Please refer to Figure 8 After the connection hole 370 is formed, the side wall 360 covering the inner wall of the connection hole 370 is formed.
[0090] From sequentially forming the metal connection layer 310, capping layer 320, low-k dielectric layer 330, interlayer dielectric layer 340 and hard mask layer 350 on the substrate 300 to forming the connection hole 370, the process steps, process functions and materials The selections are all consistent with those in the first embodiment, and will not be repeated here.
[0091] Specifically, in the embodiment of the present invention, the material forming the side wall 360 is an organic substance.
[0092...
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