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Method and charged particle multi-beam device for examining samples

A charged particle beam and charged particle technology, applied in the field of electron beam inspection, can solve the problems of not providing yield, difficult wafer inspection, long time, etc.

Active Publication Date: 2022-01-28
APPL MATERIALS ISRAEL LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, scanning the entire surface of the wafer takes a long time due to the increasing demand for higher resolution
Therefore, inspection of wafers using a conventional (single beam) scanning electron microscope (SEM) is difficult as this modality does not provide corresponding throughput

Method used

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  • Method and charged particle multi-beam device for examining samples
  • Method and charged particle multi-beam device for examining samples
  • Method and charged particle multi-beam device for examining samples

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0087] This disclosure provides several implementations. Exemplary embodiments are listed below. Embodiment 1: A method for examining a sample with an array of primary charged particle beamlets in a charged particle beam device having an optical axis extending in the z-direction of the charged particle beam device is provided. The method comprises the steps of: generating a primary charged particle beam by a charged particle beam emitter; irradiating a porous lens plate having a surface with the primary charged particle beam to generate an array of focused primary charged particle beamlets; At least a first electrode of the at least first electrode generates an electric field; wherein the field component of the electric field provided by the at least first electrode in the z direction is non-rotationally symmetric; Examine samples at different locations.

Embodiment approach 2

[0088] Embodiment 2: The method of embodiment 1, wherein at least the first electrode is arranged before the aperture lens plate in the direction of propagation of the primary charged particle beamlet.

Embodiment approach 3

[0089] Embodiment 3: The method of embodiment 1, wherein at least the first electrode is arranged behind the aperture lens plate in the direction of propagation of the primary charged particle beamlet.

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Abstract

A method of examining a sample with an array of primary charged particle beamlets in a charged particle beam device is described. The method comprises the steps of: generating a primary charged particle beam with a charged particle beam emitter; irradiating a porous lens plate with the primary charged particle beam to produce an array of primary charged particle beamlets; correcting field curvature using at least two electrodes, at least two of which The electrode includes an aperture opening; directing the primary charged particle beamlet toward the objective lens with a lens; directing the primary charged particle beamlet through an array of deflectors disposed within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlet through pass through the coma-free point of the objective lens; and use the objective lens to focus the beamlet of primary charged particles at different locations on the sample.

Description

technical field [0001] Embodiments relate to charged particle beam devices, eg, for inspection system applications, test system applications, defect inspection or critical dimensioning applications, and the like. Embodiments also relate to methods of operating a charged particle beam device. More particularly, embodiments relate to charged particle beam devices that are multi-beam systems for general purposes such as imaging biological structures and / or for high throughput EBI (Electron Beam Inspection). In particular, embodiments relate to scanning charged particle beam devices and methods of electron beam inspection using scanning charged particle beam devices. Background technique [0002] Modern semiconductor technology is highly dependent on accurate control of the various processes used during the production of integrated circuits. Therefore, check the wafer repeatedly to locate problems as early as possible. Furthermore, the mask or reticle is also checked prior to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/28H01J37/153
CPCH01J37/153H01J2237/0492H01J2237/103H01J2237/1534H01J2237/1536H01J37/28H01J2237/2817H01J37/09H01J37/10H01J37/226H01J2237/0453H01J2237/0475
Inventor 于尔根·弗洛森彼得·克鲁伊特
Owner APPL MATERIALS ISRAEL LTD