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Imaging array with extended dynamic range

A pixel and pixel sensor technology, applied in the field of imaging arrays, can solve the problem of different photodiodes

Inactive Publication Date: 2019-09-06
BAE SYST IMAGING SOLUTIONS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of multiple photodiodes presents additional challenges since the photodiodes are not identical and thus can have different spectral responses

Method used

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  • Imaging array with extended dynamic range
  • Imaging array with extended dynamic range
  • Imaging array with extended dynamic range

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Embodiment Construction

[0016] now refer to figure 1 , figure 1 is a schematic diagram of a CMOS imaging array utilizing a pixel sensor according to one embodiment of the present invention. The imaging array 40 is composed of a rectangular array of pixel sensors 41 . Each pixel sensor includes a photodiode 46 and interface circuitry 47 . The details of the interface circuitry depend on the particular pixel design. However, all pixel sensors include a gate connected to a row line 42 for connecting the pixel sensor to a bit line 43 . The particular row enabled at any time is determined by the row address input to row decoder 45 . The row select lines are parallel arrays of conductors that run horizontally in the metal layer above the substrate where the photodiodes and interface circuitry are constructed.

[0017] Each bit line terminates in column processing circuitry 44, which typically includes sense amplifiers and column decoders. The bitlines are parallel arrays of conductors that run vertic...

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Abstract

An imaging array and method for using the same are disclosed The imaging array includes a plurality of pixel sensors connected to a bit line, each pixel sensor includes a photodetector that includes aphotodiode, a floating diffusion node, and a buffer connected to the floating diffusion node that produces a pixel output signal having a voltage that is a monotonic function of a voltage on the floating diffusion node. Each pixel sensor also include an overflow capacitor connected to the photodiode by an overflow transfer gate that allows photocharge in excess of a predetermined charge to flow onto the overflow capacitor. The charge accumulated on the photodiode and the overflow capacitor are combined to provide an improved dynamic range for the pixel sensors.

Description

technical field [0001] The present invention relates to imaging arrays with extended dynamic range. Background technique [0002] CMOS image sensors capable of detecting very low light levels are now available. Improvements in noise suppression lead to detectors with a noise level that is a fraction of that of electrons; thus enabling individual photon counting. While such sensors can provide images in extremely low light, the photodiodes saturate at high light levels. Therefore, such sensors have a limited dynamic range. [0003] Pixel sensors with multiple photodiodes have been proposed to extend the dynamic range. In such sensors, one photodiode is sensitive to low light levels, while the other photodiode has a much lower light conversion rate and can therefore be used to provide light measurements when the low-light photodiode is saturated. However, the use of multiple photodiodes presents additional challenges since the photodiodes are not identical and thus can hav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/359H04N5/3745H04N25/00
CPCH04N25/57H04N25/621H04N25/771H01L27/14612H01L27/14643H01L27/14806H01L27/14887H04N25/75
Inventor H·T·杜R·D·麦克格雷斯
Owner BAE SYST IMAGING SOLUTIONS
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