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Device and method for measuring secondary electron emission coefficient of material

A technology of secondary electron emission and coefficient, applied in the fields of physical electronics and optoelectronics

Active Publication Date: 2019-09-10
NORTH NIGHT VISION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the problems existing in the existing devices or methods for measuring the secondary electron emission coefficient of materials, the present invention proposes a device and method for measuring the secondary electron emission coefficient of materials

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  • Device and method for measuring secondary electron emission coefficient of material
  • Device and method for measuring secondary electron emission coefficient of material
  • Device and method for measuring secondary electron emission coefficient of material

Examples

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Embodiment 1

[0038] Such as figure 1 As shown, a device for measuring the secondary electron emission coefficient of materials, including an electron gun 1, a microchannel plate 3, a test fixture 4, a manipulator 5, a bellows 6, a moving guide rod 7, a collector 8, an ammeter 10, and a vacuum chamber 2 And working power source 9, it is characterized in that: in vacuum chamber 2 along the central axis z of vacuum chamber 2, electron gun 1, test fixture 4 and collector 8 that are arranged in parallel successively from top to bottom; Test fixture 4 is equipped with microchannel plate 3. The micro-channel plate adopts the Φ25-6 / 8 type micro-channel plate used by the intensifier. The micro-channel plate 3 includes the input end 3-4 and the output end 3-5. The input end 3-4 of the micro-channel plate faces the electron gun 1. Both the input end 3-4 and the output end 3-5 are plated with nickel-chromium electrodes, wherein the nickel composition is 80%, the chromium composition is 20%, and the p...

Embodiment 2

[0048] Measuring SiO 2 Secondary electron emission coefficients of materials bombarded with different electron energies

[0049] The micro-channel plate adopts the Φ25-6 / 8 type micro-channel plate used in the image intensifier, its diameter is Φ25mm, the channel aperture is 6μm, the channel center distance is 8μm, the plate thickness is 0.3mm, and the input and output electrodes are nickel-chromium alloy, wherein the nickel composition is 80%, the chromium composition is 20%, and the purity is 99.9%.

[0050] Evaporation source 12 is SiO 2 Materials, put the microchannel plate into the vacuum coating machine, and plate a layer of SiO with a thickness of 250nm on the input end of the microchannel plate according to the usual coating process. 2 film layer. The microchannel plate is then placed on the test fixture of the measurement device so that it makes good contact with the input and output electrodes on the test fixture. Adjust the position of the micro-channel plate so ...

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Abstract

The invention discloses a device and method for measuring a secondary electron emission coefficient of a material. The device is characterized in that an electronic gun, a test fixture and a collection pole are sequentially and parallelly arranged from top to bottom in a vacuum chamber along the central axis z of the vacuum chamber; a micro-channel plate is mounted on the test fixture and comprises an input end and an output end, and the input end faces the electronic gun; working power supplies are located outside the vacuum chamber and comprise the electronic gun power supply, the micro-channel plate power supply and the collection pole power supply which are sequentially connected with the electronic gun, the micro-channel plate and the collection pole correspondingly; an ampere meter is located outside the vacuum chamber and located between the collection pole power supply and the collection pole; and a manipulator is connected with a moving guiding rod in the vacuum chamber through a corrugated pipe. According to the method, an output current of the micro-channel plate is proportional to the secondary electron emission coefficient of the material on the input end, and meanwhile, the secondary electron emission coefficient of the material is measured by taking the secondary electron emission coefficient of the nickel-chromium electrode material as the reference, wherein theinput end of the micro-channel plate is plated with the nickel-chromium electrode material.

Description

technical field [0001] The invention belongs to the technical field of physical electronics and optoelectronics, and in particular relates to a measuring device and method for a secondary electron emission coefficient of a material. Background technique [0002] The secondary electron emission effect of materials is an important field of research in physical electronics and optoelectronics. When electrons bombard the surface of a material, if the energy of the incident electrons is greater than the work function of the material, electrons will be emitted. This phenomenon is called secondary electron emission and is characterized by the secondary electron emission coefficient. The secondary electron emission coefficient refers to the ratio of the number of emitted secondary electrons to the number of incident primary electrons. In some application fields, such as in photomultiplier tubes, the secondary electron emission effect of the nanopole is used to achieve multiplicatio...

Claims

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Application Information

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IPC IPC(8): G01N23/2251
CPCG01N23/2251
Inventor 李晓峰常乐曾进能李廷涛周善堃
Owner NORTH NIGHT VISION TECH
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