Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Full range temperature compensation method for semiconductor gas sensor

A gas sensor, temperature compensation technology, applied in the direction of material resistance, can solve the problems of high hardware cost, large database workload, difficult implementation, etc., to achieve the effect of enhancing applicability, simple model structure, and reducing the difficulty of establishment

Active Publication Date: 2021-12-07
GOLDCARD HIGH TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This compensation method must first obtain the actual measured values ​​of gas concentration, temperature, and humidity, but because the resistance value of the semiconductor gas sensor is not linearly related to the gas concentration, this method is not suitable for semiconductor gas sensors, and the actual work of establishing a database The amount is too large, the required hardware cost is too high, and it is difficult to realize

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Full range temperature compensation method for semiconductor gas sensor
  • Full range temperature compensation method for semiconductor gas sensor
  • Full range temperature compensation method for semiconductor gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The technical solutions of the embodiments of the present invention will be explained and described below in conjunction with the accompanying drawings of the embodiments of the present invention, but the following embodiments are only preferred embodiments of the present invention, not all of them. Based on the examples in the implementation manners, other examples obtained by those skilled in the art without making creative efforts all belong to the protection scope of the present invention.

[0029] In order to better illustrate the present disclosure, numerous specific details are given in the following specific embodiments. It will be understood by those skilled in the art that the present disclosure may be practiced without some of the specific details. In some embodiments, methods, means, components and circuits well known to those skilled in the art are not described in detail in order to highlight the gist of the present invention.

[0030] refer to figure 1 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a full-scale temperature compensation method for a semiconductor gas sensor, belongs to the technical field of gas sensor detection, and solves the defect that the existing semiconductor gas sensor cannot be used for gas concentration output. The full-range temperature compensation method of the present invention includes the following steps: S1. Obtain the current ambient temperature and the resistance value of the semiconductor gas sensor in the current use environment, and determine the current normalization coefficient based on the calibrated resistance value of the semiconductor gas sensor; S2, search the upper and lower temperature values ​​similar to the current ambient temperature in the pre-established temperature compensation database, and use the linear interpolation method to generate the normalization coefficient and gas concentration comparison table under the current ambient temperature condition; S3, generate in step S2 Look up the upper and lower gas concentrations that are similar to the current normalization coefficient in step S1 in the normalization coefficient and gas concentration comparison table, and use the linear interpolation method to calculate and obtain the gas concentration under the current ambient temperature condition.

Description

【Technical field】 [0001] The invention relates to the technical field of gas sensor detection, in particular to a full-range temperature compensation method for a semiconductor gas sensor. 【Background technique】 [0002] The semiconductor gas sensor is made by using the mechanism that the gas is in contact with the semiconductor gas sensor, and the oxidation-reduction reaction occurs on the surface of the semiconductor, resulting in the change of the resistance of the semiconductor gas sensor. People use this to detect the composition of a specific gas or measure the gas concentration. The semiconductor gas sensor is different from the catalytic combustion sensor. Its resistance value is not linearly related to the gas concentration, but with the increase of the gas concentration, it presents a negative power exponential decrease trend, so that the resistance value changes little in the high gas concentration area. Difficult to distinguish exactly. At the same time, its res...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12G01N27/16
CPCG01N27/12G01N27/16
Inventor 章欢赵春焕管廷昌金磊郭刚聂西利丁渊明
Owner GOLDCARD HIGH TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com