Space angle beam-combining semiconductor laser unit, preparation technology thereof and beam-combining method
A space angle, semiconductor technology, applied in the direction of semiconductor lasers, semiconductor laser devices, lasers, etc., can solve the problems of large space occupation, low continuous output power, poor laser monochromaticity, etc., to improve heat dissipation efficiency, compact structure, and easy integration Effect
Inactive Publication Date: 2019-09-20
HUAIYIN INSTITUTE OF TECHNOLOGY
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Problems solved by technology
[0003] Horizontal array semiconductor laser (invention patent CN201510491665.1) has the advantages of uniform temperature of each chip and good laser monochromaticity, but the structure takes up a lot of space, which is not conducive to large-scale integration
[0004] Spatial step array semiconductor laser (invention patent CN201610052020.2) has the advantages of compact structure and easy inheritance. However, because the laser adopts a step pattern, the temperature distribution of each chip is uneven and the laser monochromaticity is poor.
Moreover, it is difficult to process the cooling channel in a stepped manner, which restricts the development of high-power spatial vertical array semiconductor lasers
[0005] Stacked array semiconductor lasers (invention patent CN201410846317.7) solve the problem of large-scale integration of chips and increase the laser density. cooling technology, therefore, the laser cooling effect is not good
Only the pulse output mode can be used, and the continuous output power is still low
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[0040] The present invention will now be further described in detail in conjunction with the accompanying drawings and embodiments. These drawings are all simplified schematic diagrams, only illustrating the basic structure of the present invention in a schematic manner, so it only shows the composition related to the present invention.
[0041] Such as Figure 1~Figure 4 As shown, a kind of spatial angle beam-combining semiconductor laser of this embodiment includes a housing 1, at least one phase-change cooling enthusiasm 2 installed in the housing 1, and a mirror group 3, which is installed on the phase-change cooling enthusiasm 2 Several laser chips 4; each laser chip 4 is equipped with a group of collimating mirror groups, and each collimating mirror group includes at least one FAC collimating mirror 5 installed on each laser chip 4, and corresponding to each FAC At least one SAC collimating mirror 6 is provided by the collimating mirror 5, and the laser beam emitted by t...
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The invention relates to a space angle beam-combining semiconductor laser unit, a preparation technology thereof and a beam-combining method. The space angle beam-combining semiconductor laser unit comprises a shell, at least one phase change cooling zeal and a reflector group which are mounted inside the shell, and a plurality of laser chips mounted on the phase change cooling zeal, wherein a collimating mirror group is mounted on the laser chips; the reflector group and an optical fiber arranged on the shell are located on a straight line, a coupling mirror is arranged between the optical fiber and the reflector group, and at least one group of inlets and outlets connected with the phase change cooling heat zeal is arranged on the shell. According to the space angle beam-combining semiconductor laser unit disclosed by the invention, the continuous output power can be improved effectively; light clusters in space angle distribution are obtained through the reflector group; and the light clusters in space angle distribution are combined in one bundle by using the coupling mirror, and the light clusters are output through optical fibers.
Description
technical field [0001] The present invention relates to the field of lasers, in particular to the field of semiconductor lasers, in particular to a space angle beam combining method and a semiconductor laser thereof. Background technique [0002] The current common semiconductor laser structures in this field mainly include: horizontal array semiconductor lasers, spatial vertical array semiconductor lasers, and stacked array semiconductor lasers. [0003] The horizontal array semiconductor laser (invention patent CN201510491665.1) has the advantages of uniform temperature of each chip and good laser monochromaticity, but the structure occupies a large space and is not conducive to large-scale integration. [0004] Spatial step array semiconductor laser (invention patent CN201610052020.2) has the advantages of compact structure and easy inheritance. However, because the laser adopts a step pattern, the temperature distribution of each chip is uneven and the laser monochromati...
Claims
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IPC IPC(8): H01S5/40H01S5/024
CPCH01S5/02415H01S5/4012H01S5/4075
Inventor 谷洲之冯慧慧许玉王琦蔡康捷
Owner HUAIYIN INSTITUTE OF TECHNOLOGY