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Arf photoresist capable of obtaining trench and hole patterns below 90nm and its preparation method and application

A technology of photoresist and graphics, which is applied in the field of polymers, can solve the problem of low resolution and achieve the effect of high resolution

Active Publication Date: 2021-08-17
广州微纳光刻材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patterns obtained in the photolithography process mainly include two types: linear trenches (trench) and holes (contact holes). The size of a stable trench is generally above 300nm, and the contact hole is a major reason that restricts the pattern accuracy of domestic photoresists. The size of the available hole is generally between 500nm and 3μm

Method used

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  • Arf photoresist capable of obtaining trench and hole patterns below 90nm and its preparation method and application
  • Arf photoresist capable of obtaining trench and hole patterns below 90nm and its preparation method and application
  • Arf photoresist capable of obtaining trench and hole patterns below 90nm and its preparation method and application

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Embodiment Construction

[0063] In order to describe the technical content, achieved goals and effects of the present invention in detail, the following descriptions will be made in conjunction with the embodiments and accompanying drawings.

[0064] Embodiment 1 of the present invention is: an ArF photolithography resin capable of obtaining Trench and Hole patterns below 90 nm, and its synthesis method is as follows: 16.5 g of monomer M1, 15 g of monomer M2 and 5 g of monomer M3 are dissolved and transferred in 60 mL of acetonitrile Into the reaction bottle, raise the temperature of the mixed liquid system to 90°C, add 0.12g of dibenzoyl peroxide (Dibenzoyl peroxide, BPO), mix well, raise the temperature of the reaction system to 100°C, continue the reaction for 8h, add 5mL The reaction was terminated by ethanol, and the reaction-terminated mixture was precipitated in ethanol, and the obtained solid was heated and dried in an oven at 100° C. for 8 hours to obtain 30.5 g of white powdery polymer P1.

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Abstract

The invention discloses a photoresist capable of obtaining Trench and Hole patterns below 90 nm and a preparation method and application thereof. The compound comprises at least two of the following structural units: (a1): having an acidic group generated by hydrolysis (a2): a structural unit capable of forming a rigid main chain; (a3): a structural unit with a cyclic group; if included, the molar proportion of the structural unit (a2) is 1-80 %; if included, the molar proportion of the structural unit (a3) ​​is 20-99%. Compared with the prior art, the compounds of the solution of the present invention can be used to obtain high-resolution Trench and hole patterns below 200nm, the highest resolution is 46nm diameter Hole, and the resolution of Iso space can reach 120nm and DOF 200nm.

Description

technical field [0001] The invention relates to the field of macromolecules, in particular to an ArF photoresist capable of obtaining Trench and Hole patterns below 90 nm, a preparation method and application thereof. Background technique [0002] Photolithography is the process of transferring a preset pattern on a mask to a substrate by using a photochemical reaction. In the photolithography process, the incident light passes through the mask, so that the pattern on the mask is projected onto the photoresist coated on the substrate, which stimulates the photochemical reaction, and is baked and developed to form a photoresist. pattern, and then the photoresist pattern is used as a barrier layer to selectively block subsequent etching or ion implantation. Therefore, photoresist is of great significance to photolithography technology, especially the development of large-scale and ultra-large-scale integrated circuits in recent years, which has greatly promoted the research, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F220/22C08F232/08C08F220/18G03F7/004
CPCC08F220/18C08F220/22G03F7/004C08F232/08
Inventor 邓云祥袁自强袁敏民
Owner 广州微纳光刻材料科技有限公司