Novel field effect transistor small signal equivalent circuit model parameter extraction method

Abstract

The invention discloses a novel method for extracting small-signal equivalent circuit model parameters of a field effect transistor by utilizing an analytic iteration method of a characteristic function. According to the method, the small-signal equivalent circuit of the field effect transistor is divided into two sub-circuits, namely a cost characteristic sub-circuit and a parasitic sub-circuit. Parasitic capacitance, parasitic resistance and parasitic inductance are extracted as first-round parasitic element parameter values by using a parasitic sub-circuit characteristic function. Then, parasitic capacitance, parasitic resistance and parasitic inductance are stripped by using a first round of parasitic element parameter values, and a first round of intrinsic element parameter values are extracted by using an intrinsic sub-circuit characteristic function. A second round of parasitic element parameter value is obtained by extracting through the difference between the characteristic functions of the parasitic sub-circuit and the intrinsic sub-circuit, stripping the parasitic capacitance, the parasitic resistance and the parasitic inductance, and extracting to obtain a second round of intrinsic element parameter value by using the characteristic function of the intrinsic sub-circuit. Repeated iteration is performed to converge to the required precision. The method can avoid the problem of multi-valued solution, and is suitable for field effect transistors of different technologies.

Description

technical field [0001] The invention relates to a device model of a field effect transistor, in particular to a method for extracting parameters of a small-signal equivalent circuit model of the field effect transistor. Background technique [0002] Field effect transistor is one of the most important components in microelectronic devices and integrated circuit chips, and has a wide range of applications in various fields. In the design process of electronic devices and integrated circuits, the field effect transistor model is an indispensable tool. Internationally, digital models of field effect transistors are relatively mature and can provide high-precision model simulations. However, the radio frequency model of the field effect transistor is not very perfect at present, which has become a major difficulty in the design and implementation of radio frequency circuit chips. [0003] Field-effect transistor RF models mainly include two types, physical models and small-sig...

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Problems solved by technology

However, this structure still cannot fully reflect the characteristics of the intrinsic subcircuit of the field effect transistor, so the initial value of the parameters is not accurate enough, resulting in too large a search interval in the numerical iterative fitting process, and the problem of multi-valued solutions still exists

[0008] To sum up, the existing methods for extracting parameters of field-effect transistor small-signal equivalent circuit models in the world all have inaccurate initial values ​​of parameters, which leads to multi-value solution problems in the process of numerical iterative fitting.

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