Tellurium-cadmium-mercury chip and processing method thereof

A processing method and technology of mercury cadmium telluride, applied in the field of infrared focal plane detection, can solve the problems of configuration limitation, difficult detector chip preparation, etc., and achieves reduction of non-uniformity, improvement of environmental adaptability and reliability, and convenient operation. Effect

Pending Publication Date: 2019-10-08
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of traditional mercury cadmium telluride chip configuration, it is difficult to realize the preparation of this kind of detector chip

Method used

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  • Tellurium-cadmium-mercury chip and processing method thereof
  • Tellurium-cadmium-mercury chip and processing method thereof
  • Tellurium-cadmium-mercury chip and processing method thereof

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Embodiment Construction

[0028] In order to further explain the technical means and functions adopted by the present invention to achieve the intended purpose, the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments.

[0029] like figure 1 As shown, the HgCdTe chip 100 according to the embodiment of the present invention includes: a HgCdTe layer 10 and a circuit layer 20 .

[0030] Specifically, combining figure 1 and Figure 4 As shown, the HgCdTe layer 10 has opposite first surface 110 and second surface 120 , the first surface 110 is provided with a P-type electrode 111 , and the second surface 120 is provided with an N-type electrode 121 .

[0031] The circuit layer 20 is connected to both the P-type electrode 111 and the N-type electrode 121 . It should be noted that the circuit layer 20 can read out circuits, and the “connection” mentioned here can be understood as an electrical connection. That is to say, the circuit la...

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Abstract

The invention provides a tellurium-cadmium-mercury chip and a processing method thereof. The tellurium-cadmium-mercury chip includes a tellurium-cadmium-mercury layer and a circuit layer, wherein thetellurium-cadmium-mercury layer has opposite first and second surfaces, the first surface is provided with a P-type electrode, the second surface is provided with an N-type electrode, and the circuitlayer is connected with both the P-type electrode and the N-type electrode. The tellurium-cadmium-mercury chip is advantaged in that the P-type electrode and the N-type electrode are respectively disposed on the opposite first and second surfaces of the tellurium-cadmium-mercury layer, processing of the tellurium-cadmium-mercury chip is facilitated, detection and maintenance of the tellurium-cadmium-mercury chip are facilitated, improvement of uniformity of an electric field is facilitated, non-uniformity of the response rate is reduced, detection performance of an infrared focal plane is improved, moreover, the area of an injection region of a detector and the duty ratio are greatly improved, and detection capacity of the infrared detector is improved.

Description

technical field [0001] The invention relates to the technical field of infrared focal plane detection, in particular to a mercury cadmium telluride chip and a processing method thereof. Background technique [0002] Infrared focal plane detection technology has significant advantages such as wide spectral response band, more ground target information can be obtained, and can work day and night. It is widely used in early warning detection, intelligence reconnaissance, damage effect assessment, and investigation, development and Management, weather forecast, geothermal distribution, earthquake, volcanic activity, space astronomical exploration and other fields. [0003] HgCdTe infrared detector chip is one of the representative products of infrared detection technology. With the advancement of technology, in order to improve the detection capability of mercury cadmium telluride infrared detectors, it is necessary to have a larger single pixel of the detector and a higher dut...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/14683
Inventor 张轶刘世光李春领
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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