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A terahertz multi-frequency linear frequency converter based on photosensitive silicon

A frequency converter, photosensitive silicon technology, applied in the field of terahertz communication and imaging, to achieve the effect of mature technology, obvious conversion efficiency and low production cost

Active Publication Date: 2020-10-09
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The existing terahertz linear frequency conversion can only realize the conversion of a single frequency, and multi-frequency conversion has great application requirements in the research of functional devices such as terahertz sources and terahertz modulators

Method used

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  • A terahertz multi-frequency linear frequency converter based on photosensitive silicon
  • A terahertz multi-frequency linear frequency converter based on photosensitive silicon
  • A terahertz multi-frequency linear frequency converter based on photosensitive silicon

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Embodiment

[0033] Such as Figure 1 to Figure 4 As shown, a photosensitive silicon-based terahertz multi-frequency linear frequency converter includes a dielectric substrate 1, and also includes four sets of metal structures and photosensitive semiconductors, and the four sets of metal structures and photosensitive semiconductors are all attached to the dielectric substrate 1 On one side of the surface, four groups of metal structures are distributed on the dielectric substrate 1 without intersecting or overlapping. The four groups of metal structures are metal concentric split resonators with the same shape but different sizes, and the concentric split resonators of each group of metal structures The openings have the same size and the same opening direction; each group of metal structures includes two metal concentric resonant rings with the same shape but different sizes, and a photosensitive semiconductor is arranged between the two resonant rings, and the photosensitive semiconductor...

Embodiment 2

[0049] Such as Figure 1 to Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that the four groups of metal structures are metal concentric split resonant rings with the same shape but different sizes, and the resonant ring is a square resonant ring; the photosensitive semiconductor uses semi-doped GaAs photosensitive semiconductor.

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Abstract

The invention discloses a terahertz multi-frequency linear frequency converter based on photosensitive silicon, which comprises a sapphire silicon wafer, photosensitive silicon and a metal structure.The metal structure in one unit is composed of four groups of concentric open ring-shaped resonant rings, each group of concentric open ring-shaped resonant rings is loaded with the photosensitive silicon, different intrinsic modes can be obtained under the action of different laser powers, the switching among the intrinsic modes is realized, and the linear frequency gain is obtained. The multi-frequency terahertz wave linear frequency converter based on the photosensitive silicon provided by the embodiment of the invention can realize the effective gain of four-frequency terahertz waves by combining an optical pumping system, is simple in structure and mature in manufacturing process, and has important application prospects in the fields of terahertz source devices, terahertz communication and the like.

Description

technical field [0001] The invention relates to the technical field of terahertz communication and imaging, in particular to a photosensitive silicon-based terahertz multi-frequency linear frequency converter. Background technique [0002] Terahertz (THz) technology has great application prospects in many fields such as medical imaging, sensor detection, security inspection and anti-terrorism, high-speed wireless communication, and is an internationally recognized research frontier. In recent years, although the research on terahertz technology has made great progress, there is still a shortage of broadband and efficient terahertz sources and frequency modulation devices. The development of such terahertz frequency modulation devices has become the key to be solved in the terahertz field. sexual issues. [0003] The conversion efficiency of linear frequency conversion does not depend on the intensity of the converted signal. Compared with nonlinear frequency conversion, it ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 冉佳郝宏刚马勇
Owner CHONGQING UNIV OF POSTS & TELECOMM
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