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Graphene in-plane bidirectional strain detection method and device

A detection method and graphene technology, applied in the field of mechanical measurement, can solve problems such as the inability to realize the decoupling analysis of flexible substrate materials, the difficulty in satisfying engineering requirements, and the inability to realize non-equivalent biaxial and two-direction strain decoupling measurement, etc.

Active Publication Date: 2019-10-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for graphene samples in a biaxial strain state, the existing Raman strain measurement technology cannot realize the decoupling measurement of the in-plane non-equal biaxial and biaxial strain, so that the accurate strain state and level cannot be reflected.
In addition, the graphene-based strain sensing technology is currently unable to realize the decoupling analysis of the non-equal biaxial strain in the flexible substrate material and the structural plane, which is difficult to meet the needs of engineering.

Method used

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  • Graphene in-plane bidirectional strain detection method and device
  • Graphene in-plane bidirectional strain detection method and device
  • Graphene in-plane bidirectional strain detection method and device

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Embodiment 1

[0034] figure 1 It is a flow chart of the in-plane bidirectional strain detection method of graphene provided in Embodiment 1 of the present invention.

[0035] refer to figure 1 , the method includes the following steps:

[0036] Step S1, obtaining the graphene sample to be tested and a backscattered polarized Raman system;

[0037] Step S2, setting the sample coordinate system of the measured graphene sample under the backscattered polarized Raman system;

[0038] Specifically, refer to figure 2 , the measured graphene sample 1 is a single-layer single-crystal graphene, and its Zigzag (zigzag direction) and Armchair (armchair direction) constitute a crystal coordinate system, wherein Zigzag is the X axis (horizontal axis), and Armchair is the Y axis ( vertical axis).

[0039] The measured graphene sample 1 is in a two-dimensional strain state, and the two principal strains are respectively expressed by ε 1 and ε 2Indicates that ε 1 is the first principal strain, ε ...

Embodiment 2

[0068] image 3 It is a schematic diagram of an in-plane bidirectional strain detection device for graphene provided in Embodiment 2 of the present invention.

[0069]refer to image 3 , the device consists of:

[0070] The sample coordinate system acquisition unit 10 is used to acquire the sample coordinate system of the measured graphene sample, the backscattered polarized Raman system, and the measured graphene sample under the backscattered polarized Raman system;

[0071] The sample parameter acquisition unit 20 is used to acquire the parameters of the measured graphene sample, the parameters include crystal orientation angle, principal strain angle, phonon variable form factor and unstrained G peak Raman frequency shift;

[0072] The detection parameter setting unit 30 is used to set the incident light polarization angle and the scattered light polarization angle of the backscattered polarized Raman system, wherein the incident light polarization angle includes a first...

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Abstract

The invention provides a graphene in-plane bidirectional strain detection method and device. The method comprises the following steps of acquiring a detected graphene sample and a back scattering polarization raman system; setting a sample coordinate system of the detected graphene sample under the back scattering polarization raman system; obtaining the crystal orientation angle, the main strainangle, the phonon variation coefficient and the strain-free G-peak raman frequency shift of the detected graphene sample; setting an incident light polarization angle and a scattered light polarization angle; setting a detected point of the detected graphene sample; adopting the back scattering polarization raman system, regulating and controlling the incident light polarization angle and the scattered light polarization angle so as to obtain the G-peak raman frequency shift increment of the detected point; and according to the linear relation between the G-peak raman frequency shift incrementand the first main strain and between the G-peak raman frequency shift increment and the second main strain, the incident light polarization angle, the scattered light polarization angle, the phononvariation coefficient, the strain-free G-peak raman frequency shift and the G-peak raman frequency shift increment of the detected point, obtaining the first main strain and the second main strain, sothat the nondestructive and accurate measurement of the graphene sample in-plane bidirectional strain is realized.

Description

technical field [0001] The invention relates to the technical field of mechanical measurement, in particular to a graphene in-plane bidirectional strain detection method and device. Background technique [0002] In recent years, with the development of micro- and nano-scale science and technology, research on the performance of materials and devices at the micro- and nano-scale has become a frontier field of common concern among multiple disciplines. As a two-dimensional nanomaterial, graphene has excellent optical, electrical, and mechanical properties, and has important application prospects in materials science, micro-nano processing, and energy. Its application has important influence. Therefore, it is an urgent need for the development of this field to carry out research on new technologies and new methods for the non-destructive testing and characterization of graphene-related mechanical parameters at the micro- and nano-scales, so as to accurately grasp its strain st...

Claims

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Application Information

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IPC IPC(8): G01N21/65G01N21/47G01B11/16
CPCG01B11/168G01N21/47G01N21/65G01N2021/4792
Inventor 仇巍李如冰亢一澜曲传咏张茜鲍华强
Owner TIANJIN UNIV