Two-dimensional ultrathin material of novel ternary compound InGeTe3 single crystal and preparation method of two-dimensional ultrathin material

Abstract

The invention provides a two-dimensional ultrathin material of a novel ternary compound InGeTe3 single crystal and a preparation method of the two-dimensional ultrathin material. The preparation method comprises the following steps: firstly, mixing three pure elements of In, Ge and Te according to a stoichiometric ratio, adding the pure elements into a quartz tube and sealing the quartz tube, andimplementing a vacuum tube sealing and sintering technique so as to obtain an InGeTe3 single crystal, repeatedly sticking a Scotch adhesive tape to the single crystal and tearing the Scotch adhesive tape till the surface of the Scotch adhesive tape has no conspicuous fluctuation, further transferring the single crystal to a heat slow-release adhesive tape as a transferring medium, further transferring the InGeTe3 single crystal on the heat slow-release adhesive tape to a silicon wafer, and finally repeatedly sticking the Scotch adhesive tape to the InGeTe3 single crystal on the silicon wafer and tearing the Scotch adhesive tape to thin the InGeTe3 single crystal, so as to obtain the two-dimensional ultrathin material of the InGeTe3 single crystal. According to the characteristic that the viscosity of the heat slow-release adhesive tape is vanished at a certain temperature, high-efficiency and high-yield transferring can be achieved, the number of single crystals transferred to the silicon wafer and moderate sizes can be ensured, thus further peeling on the silicon wafer is achieved to obtain the two-dimensional ultrathin material of a high yield later.

Description

technical field [0001] The invention belongs to the field of preparation and synthesis of ultra-thin compound materials, in particular to a novel ternary compound InGeTe 3 Single-crystal two-dimensional ultrathin materials and their preparation methods. Background technique [0002] With the rapid development of computer science and technology, the size of its basic unit field effect transistor is getting smaller and smaller, while the traditional silicon field effect transistor is difficult to continue Moore's Law due to its strong short channel effect. Two-dimensional materials have attracted wide attention due to their thin atomic layers and insignificant short-channel effects. Two-dimensional materials are connected by covalent bonds within the layers, and there are weak van der Waals forces between the layers. The carrier migration and heat diffusion are restricted in the two-dimensional plane, which makes this material exhibit many peculiar properties. Its adjustable...

AI Technical Summary

Problems solved by technology

In the traditional mechanical exfoliation process, it will be found that the amount of sample transferred to the silicon wafer is very small, the repeatability is poor, and the yield is also very low.

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