The invention provides a two-dimensional ultrathin material of a novel
ternary compound InGeTe3
single crystal and a preparation method of the two-dimensional ultrathin material. The preparation method comprises the following steps: firstly, mixing three pure elements of In, Ge and Te according to a stoichiometric ratio, adding the pure elements into a
quartz tube and sealing the
quartz tube, andimplementing a
vacuum tube sealing and
sintering technique so as to obtain an InGeTe3
single crystal, repeatedly sticking a Scotch
adhesive tape to the
single crystal and tearing the Scotch
adhesive tape till the surface of the Scotch
adhesive tape has no conspicuous fluctuation, further transferring the single
crystal to a heat slow-release adhesive tape as a transferring medium, further transferring the InGeTe3 single
crystal on the heat slow-release adhesive tape to a
silicon wafer, and finally repeatedly sticking the Scotch adhesive tape to the InGeTe3 single
crystal on the
silicon wafer and tearing the Scotch adhesive tape to thin the InGeTe3 single crystal, so as to obtain the two-dimensional ultrathin material of the InGeTe3 single crystal. According to the characteristic that the
viscosity of the heat slow-release adhesive tape is vanished at a certain temperature, high-efficiency and high-yield transferring can be achieved, the number of single crystals transferred to the
silicon wafer and moderate sizes can be ensured, thus further peeling on the silicon wafer is achieved to obtain the two-dimensional ultrathin material of a high yield later.