Electrostatic discharge protection device and its application
A technology of electrostatic discharge protection and electrostatic discharge, which is used in circuits, electrical components, electrical solid devices, etc.
Active Publication Date: 2021-11-30
MACRONIX INT CO LTD
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The first doped well region is located in the semiconductor substrate
The second doped well region is located in the first doped well region
The third doped region is located in the first doped well region
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[0033] This specification provides an electrostatic discharge protection device and its application, which can simultaneously disperse forward and reverse electrostatic discharge currents, and achieve the purpose of reducing the overall layout size of integrated circuits and operating with negative voltages. In order to make the above-mentioned embodiments and other purposes, features and advantages of this specification more comprehensible, a number of electrostatic discharge protection devices and their application devices and methods are specifically cited as preferred embodiments below, and described in detail with the accompanying drawings.
[0034] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The preferred embodiments are presented only to illustrate the technical features of the present invention...
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An electrostatic discharge protection device includes a first bipolar transistor parasitic circuit and a second bipolar transistor parasitic circuit formed in a base material and having different majority carriers, and an electrostatic discharge protection element. The electrostatic discharge protection element has a ground terminal and a connection terminal connected to the parasitic circuit of the first bipolar transistor. When the electrostatic discharge voltage is greater than the ground voltage, the first current will pass through the combination of the first protection circuit including the parasitic diode and the electrostatic discharge protection element in the first bipolar transistor parasitic circuit and the first bipolar transistor parasitic circuit and the second bipolar transistor parasitic circuit. A second protection circuit for the polar transistor parasitic circuit combines one of the two to ground. When the electrostatic discharge voltage is lower than the ground voltage, the second current is introduced into the voltage source from the ground through the other one of the first protection circuit combination and the second protection circuit combination.
Description
technical field [0001] The present disclosure relates to a semiconductor circuit and its application. In particular, it relates to an electrostatic discharge (ESD) protection device and its application. Background technique [0002] Electrostatic discharge is a phenomenon of accumulation and transfer of electrostatic charge between different objects. In a very short time, usually only a few nanoseconds, a very high-energy, high-density current is generated, and once it flows through a semiconductor device, it usually damages the semiconductor device. Therefore, when an electrostatic charge is generated in a semiconductor device by machinery or human body, an electrostatic discharge protection device and a discharge path must be provided to prevent the semiconductor device from being damaged. [0003] Taking the ESD protection structure widely used between the input / output (I / O) pads of integrated circuits and internal circuits as an example, it utilizes the built-in parasi...
Claims
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IPC IPC(8): H01L27/02
CPCH01L27/0255
Inventor 王世钰黄文聪
Owner MACRONIX INT CO LTD