Chip of light emitting diode and preparation method of chip

Abstract

The invention discloses a chip of a light emitting diode and a preparation method of the chip, and belongs to the field of light emitting diode manufacturing. In the chip of the light emitting diode,a current blocking layer is divided into a first part and a second part. The first part and the second part are respectively in contact with a bonding pad of a p electrode and an electrode finger. Theorthographic projection of the electrode finger on the surface of a substrate is located in the orthographic projection of the second part on the substrate, and the area of the orthographic projection of the electrode finger on the surface of the substrate is smaller than the area of the orthographic projection of the second part on the substrate. Through the second part of the current blocking layer, the expansion of the current of the area where the electrode finger is located can be well achieved, and the situation that the current of the area where the electrode finger is located is too concentrated to cause breakdown holes in the epitaxial layer can be reduced, thereby reducing the abnormal light emitting situation in the epitaxial layer. The current expansion efficiency in the chipof the light emitting diode is improved, the abnormal light emitting condition is reduced, and the overall light emitting uniformity of the chip is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode manufacturing, in particular to a light-emitting diode chip and a preparation method thereof. Background technique [0002] LED is a light-emitting diode, which is a semiconductor solid-state light-emitting device. LED has the characteristics of energy saving, environmental protection, long life, firm structure, fast response time, etc., and can be widely used in various general lighting, backlighting, display, indication and urban night scenes and other fields. [0003] The current light-emitting diode chip usually includes a substrate, an epitaxial layer grown on the substrate, and a current blocking layer grown sequentially on the epitaxial layer, a transparent conductive layer, and a passivation layer. The chip also includes an n-electrode and a p-electrode. The epitaxial layer usually includes an n-type layer, a light-emitting layer, and a p-type layer grown sequentially on the substrate....

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Problems solved by technology

[0004] However, due to the small area of ​​the current current blocking layer, especially the weak current spreading ability in the area where the electrode fingers are located, and the current in the area where the electrode fingers are located is still relatively concentrated, it is easy to have breakdown holes in the epitaxial layer and cause the electrode fingers to appear. Abnormal luminescence will eventually affect the luminous uniformity of LEDs

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