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Film bulk acoustic resonator, filter and preparation method of film bulk acoustic resonator

A thin-film bulk acoustic wave and resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems that thin-film bulk acoustic wave resonators cannot be used normally, and the mechanical strength is not enough, so as to avoid incomplete corrosion, enhance mechanical firmness, reduce The effect of device loss

Pending Publication Date: 2019-10-22
MG MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a thin film bulk acoustic resonator, a filter, and a method for preparing a thin film bulk acoustic resonator, so as to solve the problem that the thin film bulk acoustic resonator in the prior art often suffers from insufficient mechanical strength, so that Technical Problems of Film Bulk Acoustic Resonator Unusable

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  • Film bulk acoustic resonator, filter and preparation method of film bulk acoustic resonator
  • Film bulk acoustic resonator, filter and preparation method of film bulk acoustic resonator
  • Film bulk acoustic resonator, filter and preparation method of film bulk acoustic resonator

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Embodiment 1

[0042] An embodiment of the present invention provides a film bulk acoustic resonator. figure 1 For a schematic cross-sectional structure diagram of a thin film bulk acoustic resonator provided in an embodiment of the present invention, see figure 1 , the thin film bulk acoustic resonator comprises: a support structure 10, an air gap 11 is arranged inside the support structure 10; a lower electrode 20, a piezoelectric layer 30 and an upper electrode 40 formed on the support structure 10 are arranged in sequence from bottom to top.

[0043] Optionally, the piezoelectric layer 30 wraps a part of the lower electrode 20, and the upper electrode 40 wraps a part of the piezoelectric layer 30 again.

[0044] In this embodiment, the thin film bulk acoustic resonator includes a support structure 10 with an air gap 11 inside, and a piezoelectric oscillating acoustic stack composed of a lower electrode 20 , a piezoelectric layer 30 and an upper electrode 40 . The film bulk acoustic wave...

Embodiment 2

[0053] On the basis of the above embodiments, an embodiment of the present invention provides a filter, including the thin film bulk acoustic resonator described in any of the above embodiments.

[0054] The filter in this embodiment includes the thin film bulk acoustic resonator described in any of the above embodiments, and the support structure included in the thin film bulk acoustic resonator is provided with an air gap inside, forming a bottom-up arrangement on the support structure. Piezoelectric oscillating acoustic stack composed of electrodes, piezoelectric layer and upper electrode, supporting structure supporting the piezoelectric oscillating acoustic stack composed of lower electrode, piezoelectric layer and upper electrode, and the whole film bulk acoustic resonator forms an air interface on the lower surface of the lower electrode , in order to achieve the purpose of reflecting sound waves, reducing device loss, and improving the quality factor of the resonance un...

Embodiment 3

[0056] On the basis of the above embodiments, the embodiments of the present invention provide a method for manufacturing a thin film bulk acoustic resonator, image 3 A flow chart of a method for preparing a thin film bulk acoustic resonator provided by an embodiment of the present invention is shown, see image 3 , the method includes the following steps:

[0057] Step 110, forming a support structure, and setting an air gap inside the support structure.

[0058] see Figure 4 , forming a support structure 10 , and an air gap 11 is provided inside the support structure 10 .

[0059] Step 120 , forming a lower electrode, a piezoelectric layer and an upper electrode sequentially arranged from bottom to top on the supporting structure.

[0060] see Figure 5 , on the supporting structure 10, a lower electrode 20, a piezoelectric layer 30, and an upper electrode 40 are sequentially arranged from bottom to top.

[0061] In this embodiment, the thin film bulk acoustic resonat...

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Abstract

The embodiment of the invention discloses a film bulk acoustic resonator, a filter and a preparation method of the film bulk acoustic resonator, and the film bulk acoustic resonator comprises: a supporting structure which is internally provided with an air gap; and a lower electrode, a piezoelectric layer and an upper electrode which are formed on the supporting structure and arranged from bottomto top. According to the technical scheme provided by the embodiment of the invention, the mechanical firmness of the film bulk acoustic resonator is improved, and the problems of incomplete corrosionand incomplete cleaning of the sacrificial layer by the corrosive liquid injected into the through hole in the conventional process are effectively avoided.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular to a film bulk acoustic resonator, a filter, and a method for preparing a film bulk acoustic resonator. Background technique [0002] In recent years, with the rapid development of wireless communication technology towards high frequency and high speed, and the development of electronic components towards miniaturization and low power consumption, the filtering based on Film Bulk Acoustic Resonator (FBAR) The research and development of devices has attracted more and more people's attention. [0003] The current thin film bulk acoustic resonator often cannot be used normally because of its insufficient mechanical firmness. Contents of the invention [0004] In view of this, an embodiment of the present invention provides a thin film bulk acoustic resonator, a filter, and a method for preparing a thin film bulk acoustic resonator, so as to solve th...

Claims

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Application Information

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IPC IPC(8): H03H9/17H03H9/05H03H3/02H03H9/58
CPCH03H9/171H03H9/173H03H9/0504H03H3/02H03H9/582H03H2003/023
Inventor 缪建民张瑞珍
Owner MG MICROELECTRONICS CO LTD
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