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Chemical vapor deposition apparatus with multi-zone injection block

A chemical vapor deposition, ejector technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of unpredictable reaction gas distribution and so on

Active Publication Date: 2019-10-25
VEECO INSTR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Despite these developments, the distribution of reactant gases within a CVD reactor can still be somewhat unpredictable

Method used

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  • Chemical vapor deposition apparatus with multi-zone injection block
  • Chemical vapor deposition apparatus with multi-zone injection block
  • Chemical vapor deposition apparatus with multi-zone injection block

Examples

Experimental program
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Embodiment Construction

[0033] refer to figure 1 , depicts a schematic diagram of a CVD reactor 100 according to an embodiment of the present disclosure. The reactor 100 defines a process chamber 102 configured to serve as a process environment space. A gas distribution device or injector block 104 is arranged at one end of the process chamber 102 . The end of the processing chamber 102 where the ejector block 104 is disposed may be referred to as the “top” end of the processing chamber 102 . This end of the process chamber is typically (but not necessarily) positioned at the top of the process chamber in a normal gravitational frame of reference. Thus, as used herein, a downward direction refers to a direction away from the ejector block 104, regardless of whether the indications are aligned with the gravitational upward and downward directions; whereas an upward direction refers to a direction within the process chamber toward the ejector block 104 . Similarly, the “top” and “bottom” surfaces o...

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Abstract

An injector block for supplying one or more reactant gases into a chemical vapor deposition reactor. The injector block including a plurality of first reactant gas distribution channels between one ormore first reactant gas inlets and a plurality of first reactant gas distribution outlets to deliver a first reactant gas into the reactor, and a plurality of second reactant gas distribution channels between one or more second reactant gas inlets and a plurality of second reactant gas distribution outlets to deliver a second reactant gas into the reactor, the plurality of second reactant gas distribution outlets partitioned into at least a second reactant gas first zone and a second reactant gas second zone, the second reactant gas second zone at least partially surrounding the second reactant gas first zone.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 657,255, filed April 13, 2018, which is hereby incorporated by reference in its entirety. technical field [0003] The present disclosure relates generally to semiconductor fabrication techniques. More particularly, the present disclosure relates to an ejector block for a chemical vapor deposition (CVD) reactor configured to reduce the amount of unused reaction gas exhausted from the CVD reactor and improve overall The uniformity of the vapor deposition on the growth surface improves the efficiency of the vapor deposition process. Background technique [0004] Certain processes used to fabricate semiconductors may require complex processes for growing epitaxial layers to produce high-performance devices such as light-emitting diodes (LEDs), laser diodes, optical detectors, power electronics, and field-effect transistors. Multilayer semiconduct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458
CPCC23C16/455C23C16/458C23C16/4584C23C16/45504C23C16/45572C23C16/54C23C16/45561C23C16/45574C23C16/45578C23C16/45565C23C16/45514
Inventor B·米特洛夫克I·昆奇J·伽玛拉曼德尔·德什潘德
Owner VEECO INSTR