Microelectonic device and microelectonic device manufacturing method

Abstract

The invention provides a microelectonic device and a microelectonic device manufacturing method. The microelectonic device includes at least two mutually spaced doping wells which are opposite to a substrate in doping type and are formed based on the substrate, and an epitaxial structure which is formed based on one side of the substrate and is in contact with each doping well, one side of the epitaxial structure away from the substrate is provided with at least two cascaded power devices, each of the power devices is disposed corresponding to the doping well, and a low potential end of each power device is connected with the corresponding doping well. The microelectonic device is advantaged in that by forming the mutually spaced doping wells in the substrate, a low potential end of each power device is connected with the corresponding doping well, a substrate voltage and the low potential end of each power device are made to have the same potential, performance offset or degradation of the power devices due to electron injection into the epitaxial structure is inhibited.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to microelectronic devices and methods for manufacturing microelectronic devices. Background technique [0002] GaN power electronics are a key technology enabling the next generation of high power density and high efficiency power conversion applications. GaN single-chip integrated circuits can maximize the performance of GaN-based circuit conversion systems. At present, a half-bridge structure is often used in integrated circuits, that is, the upper and lower power devices are cascaded, and then connected to the lower substrate. In this structure, due to the particularity of the GaN device epitaxial structure, the upper and lower power devices share the same individual potential (substrate potential), so that the electrical stress of the substrate is different from that of the upper and lower power devices, which is easy to control adversely af...

AI Technical Summary

Problems solved by technology

In this structure, due to the particularity of the GaN device epitaxial structure, the upper and lower power devices share the same individual potential (substrate potential), so that the electrical stress of the substrate is different from that of the upper and lower power devices, which is easy to control adverse effect on the performance of power devices

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