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Graphene-based photoelectric detector

A photodetector and graphene technology, applied in the field of photodetection, can solve the problems of affecting the responsivity of the detector, affecting the bandwidth, and the high rate of carrier recombination

Active Publication Date: 2019-10-25
SANMING UNIV
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  • Claims
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AI Technical Summary

Problems solved by technology

However, because graphene carriers have a zero band gap, the carrier recombination rate is high, which affects the responsivity of the detector.
And if the responsivity is improved by increasing the absorption length, the bandwidth will be affected by the growth of the electrode

Method used

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  • Graphene-based photoelectric detector

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Embodiment Construction

[0021] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0022] It should be noted that like numerals and let...

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Abstract

The invention provides a graphene-based photoelectric detector, which comprises an oxide substrate layer, a silicon waveguide layer, a graphene layer, a first metal electrode and a second metal electrode. The silicon waveguide layer is formed on the oxide substrate layer, and includes a rectangular silicon waveguide and a micro-ring silicon waveguide. The micro-ring silicon waveguide is arranged on a first side of the rectangular silicon waveguide and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide. The graphene layer is arranged on the silicon waveguide layer, and covers the rectangular silicon waveguide and the micro-ring silicon waveguide. The first metal electrode is arranged on one side, covered with the graphene layer, of the silicon waveguide layer, and is located on the graphene layer. The second metal electrode is arranged on the other side, without the graphene layer, of the silicon waveguide layer. The responsivity of the photoelectric detector can be improved without prolonging the absorption length and affecting the bandwidth.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a graphene-based photodetector. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support of the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been an upsurge in the construction of backbone transmission networks worldwide, and the transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also facing opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon-based optoelectronic devices have the advantages of easy integ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/028H01L31/09
CPCH01L31/02327H01L31/028H01L31/09
Inventor 崔积适
Owner SANMING UNIV
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