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A graphene-based photodetector

A photodetector and graphene technology, applied in the field of photodetection, can solve the problems of affecting the responsivity of the detector, affecting the bandwidth, and high carrier recombination rate.

Active Publication Date: 2021-10-22
SANMING UNIV
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

However, because graphene carriers have a zero band gap, the carrier recombination rate is high, which affects the responsivity of the detector.
And if the responsivity is improved by increasing the absorption length, the bandwidth will be affected by the growth of the electrode

Method used

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  • A graphene-based photodetector

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Embodiment Construction

[0021] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations. Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present invention.

[0022] It should be noted ...

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Abstract

The invention provides a graphene-based photodetector, comprising: an oxide substrate layer; a silicon waveguide layer formed on the oxide substrate layer; wherein, the silicon waveguide layer includes a rectangular silicon waveguide and a micro-ring silicon waveguide, the micro-ring silicon waveguide is arranged on the first side of the rectangular silicon waveguide, and forms a micro-ring resonant cavity structure with the rectangular silicon waveguide; the graphene layer is arranged on the silicon waveguide layer, and covers the The rectangular silicon waveguide and the micro-ring silicon waveguide; the first metal electrode is arranged on the side of the silicon waveguide layer covered with the graphene layer, and is located on the graphene layer; the second metal electrode, It is arranged on the other side of the silicon waveguide layer that is not provided with the graphene layer. The invention can improve the responsivity of the photodetector without prolonging the absorption length and affecting the bandwidth.

Description

technical field [0001] The invention relates to the field of photoelectric detection, in particular to a graphene-based photodetector. Background technique [0002] In recent years, with the rapid development of the Internet of Things, the optical fiber communication system, as an important support for the Internet of Things, has received more attention. In the field of long-distance backbone networks, with the maturity and development of optical transmission technology, there has been a boom in the construction of trunk transmission networks worldwide, and transmission bandwidth and transmission capacity have developed rapidly. [0003] With the development of optical fiber communication systems, the development of optical devices is also faced with opportunities and challenges. How to develop optical devices with excellent performance and low price has become the primary problem that people face. Silicon-based optoelectronic devices have the advantages of easy integration...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0232H01L31/028H01L31/09
CPCH01L31/02327H01L31/028H01L31/09
Inventor 崔积适
Owner SANMING UNIV
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