Welding method of high-purity sulfur phase change alloy target

A welding method and a technology of phase change alloys, which are applied in welding equipment, non-electric welding equipment, metal processing equipment, etc., can solve the problems of chalcogenide alloy target cracking, high welding temperature, and inappropriateness, and ensure the thickness of the weld seam and Uniformity, waste reduction, and cost-saving effects

Inactive Publication Date: 2019-11-01
有研新材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to its poor wettability with conventional brazing metal solder and high welding temperature, it is not suitabl

Method used

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  • Welding method of high-purity sulfur phase change alloy target
  • Welding method of high-purity sulfur phase change alloy target
  • Welding method of high-purity sulfur phase change alloy target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Flowchart such as figure 1 As shown, it includes the following steps:

[0024] Step 1: Provide high-purity chalcogenide phase change alloy target and back plate;

[0025] Step 2: Surface treatment of the welding surface of the target material and the back plate, sandblasting and roughening, and metallization of the welding surface;

[0026] Step 3: The welding temperature is 58°C, and an appropriate amount of organic welding glue is placed on the welding surface of the target and the back plate;

[0027] Step 4: Contact the welding surface of the target with the welding surface of the back plate, apply a pressure of 3Pa, and perform welding;

[0028] Step 5: Cool the welded target to complete the welding.

[0029] Among them, the sandblasting roughness needs to be set in combination with the characteristics of the target material, and the integrity and appearance of the target material must not be damaged. The metal material for the metallization of the target weldi...

Embodiment 2

[0031] Flowchart such as figure 1 shown, including the following steps:

[0032] Step 1: same as embodiment one, step 1;

[0033] Step 2: same as embodiment one, step 2;

[0034] Step 3: The welding temperature is 40°C, and an appropriate amount of organic welding glue is placed on the welding surface of the target and the back plate;

[0035] Step 4: same as embodiment one, step 4;

[0036] Step 5: Same as Embodiment 1, step 5.

Embodiment 3

[0038] Flowchart such as figure 1 shown, including the following steps:

[0039] Step 1: same as embodiment one, step 1;

[0040] Step 2: same as embodiment one, step 2;

[0041] Step 3: The welding temperature is 70°C, and an appropriate amount of organic welding glue is placed on the welding surface of the target and the back plate;

[0042] Step 4: same as embodiment one, step 4;

[0043] Step 5: Same as Embodiment 1, step 5.

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Abstract

The invention discloses a welding method of high-purity sulfur phase change alloy target. The welding method comprises the following steps of 1, providing the high-purity sulfur phase change alloy target and a back plate; 2, carrying out surface treatment of the welding surfaces of the target and the back plate; 3, placing appropriate amount of organic welding adhesives on the welding surfaces ofthe target and the back plate; 4, contacting the welding surface of the target with the welding surface of the back plate, and applying a certain pressure for welding; and 5, cooling the welded targetto complete welding. According to the welding method of the high-purity sulfur phase change alloy target, by optimizing the surface state of the welding surfaces of the target and the back plate, thetarget and the back plate are wetted with the organic welding adhesives, so that the welding area is increased, and the welding effect is improved, that is, the welded rate is improved; and at the same time, the welding temperature and the welding pressure are controlled, so that the fluidity of the welding adhesives is controlled, the amount of the welding adhesives is reduced and the thicknessof welding seams is controlled, and therefore, the requirements of the customers for the target performance are met.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a welding method for a high-purity chalcogenide phase-change alloy target. Background technique [0002] The principle of phase-change memory is to store data by using the huge conductivity difference between chalcogenide compounds in the crystalline state and the amorphous state, and to use light energy or electric energy to make the material have a significant difference in resistance or reflectivity between the crystalline state and the amorphous state. And realize. Phase change memory has many advantages, non-volatile, long cycle life (greater than 10 13 times), high-speed reading, multi-level storage, small size, low power consumption, resistance to high and low temperatures, anti-vibration and electronic interference, and compatibility with integrated circuit technology, etc., are the most promising to become both SRAM, DRAM and FLASH After...

Claims

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Application Information

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IPC IPC(8): B23K20/00B23K20/24
CPCB23K20/00B23K20/24
Inventor 张晓娜万小勇张巧霞宋艳青何金江丁照崇李勇军陈明
Owner 有研新材料股份有限公司
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