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CMOS image sensor with XY address exposure control

An image sensor and address line technology, which is applied in the field of high dynamic range complementary metal oxide semiconductor image sensors, can solve problems such as insufficient embodiments, and achieve the effects of fine exposure time, fine control, and small pixel size

Active Publication Date: 2019-11-15
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Japanese Unexamined Patent Application First Publication No. 2015-171135 discloses another method of more finely controlling exposure time, but the examples are insufficient

Method used

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  • CMOS image sensor with XY address exposure control
  • CMOS image sensor with XY address exposure control
  • CMOS image sensor with XY address exposure control

Examples

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Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. The described embodiments are some, but not all, embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] Figure 7 A circuit diagram of a pixel circuit provided by an embodiment of the present invention. An image sensor includes a plurality of pixel circuits. AMP, SL, Vsig lines and ADC ( Figure 7 not shown) to figure 2 Connect to FD in the same way as in . Replace with horizontal pulse line (VTGH_n), vertical address line (VTGV_m) and switching transistor (SW for short) figure 2 VTGHe_n and VTGHo_n in.

[0039] Figure 7 The pixel circuit in includes eight pixel units. One pi...

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PUM

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Abstract

The present invention provides a CMOS image sensor. The CMOS image sensor includes: pixel circuits which are arranged in two dimensional manner, wherein each pixel circuit includes: a switching transistor (SW), a gate of which is connected to one of a horizontal pulse line and a vertical address line, a source of which is connected to the other of the horizontal pulse line and the vertical addressline, and a drain of which is connected to a gate of a transfer gate (TG); the TG, the gate of which is connected to a drain of the SW, and a source of which is connected to a cathode of a photodiode(PD); and the PD, an anode of which is connected to a ground, and the cathode of which is connected to a source of the TG. The present invention achieves to control exposure time more finely and makethe pixel size smaller.

Description

technical field [0001] The present invention relates to an image sensor, in particular to a high dynamic range complementary metal oxide semiconductor (complementary metal oxide semiconductor, CMOS for short) image sensor. Background technique [0002] figure 1 It is a circuit diagram of a pixel circuit in the prior art of a general CMOS image sensor. The meaning of each abbreviation is as follows: PD: photodiode, used to convert light into signal electrons; TG: transfer gate used to transfer signal charge to FD; FD: floating diffuser, used to convert signal charge into signal voltage ; Cfd: capacitance of FD; RS: reset gate to set FD voltage; AMP: amplifier transistor, used to convert signal voltage of FD to low-impedance output signal; SL: selector transistor; ADC: analog-to-digital converter. PDs convert light into electrical signals. This electrical signal is selectively transmitted to the FD through the TG. The FD is connected to the gate of the AMP, and the output ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/357H04N5/3745
CPCH01L27/14603H01L27/14612H01L27/14641H01L27/14643H04N25/61H04N25/778
Inventor 物井·诚
Owner HUAWEI TECH CO LTD
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