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A high-speed superconducting nanowire single-photon detector structure

A technology of single-photon detectors and nanowire detectors, which is applied in photometry, photometry, optical radiation measurement, etc. requirements, the effect of minimizing the connection inductance

Active Publication Date: 2021-11-16
NANJING UNIV
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  • Abstract
  • Description
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Problems solved by technology

However, array detectors require multiple outputs. When the number of units is large, the output leads will occupy part of the nanowire detection area, thereby reducing the overall detection efficiency; cryogenic systems require greater cooling power, thereby providing more high-frequency simultaneous Axial connection; the external output signals of multiple detection units need to be integrated
Superconducting nanowire single-photon detector arrays work more complex than individual detectors

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  • A high-speed superconducting nanowire single-photon detector structure
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  • A high-speed superconducting nanowire single-photon detector structure

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Embodiment Construction

[0020] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0021] The high-speed superconducting nanowire single-photon detector structure of the present invention is a high-speed detector structure based on a serial superconducting nanowire array, such as figure 1 with 2 shown. The detector structure includes an avalanche nanowire detector, a thin film parallel resistor and a low temperature readout circuit. The single-photon detection region is composed of superconducting nanowire meanders.

[0022] Each detection unit adopts a resistance-parallel avalanche nanowire structure, that is, two (or more) nanowires are connected in parallel, and every four groups (or more groups) are connected in series to form a meandering structure. This detector structure not only ensures The detection area increases the intensity of the output signal, reduces the dynamic inductance of the total nanowires, and improves the detectio...

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Abstract

The invention discloses a high-speed superconducting nanowire single-photon detector structure, which includes avalanche nanowire detectors in series and parallel resistors. Multiple groups are connected in series to form an avalanche nanowire unit with a meandering structure. The avalanche nanowire unit is connected in parallel with resistors at the head and end to form a detection unit. Several detection units are connected in series to form a detector array. The RF output of the entire array structure port, a resistor R in series s . The output of the whole array of the present invention is a port, which reduces the requirements on the cryogenic system and the readout circuit; by adjusting R h , R s , and L k , can optimize the speed of the detector; the strip resistor technology can minimize the connection inductance between the resistor and the superconducting nanowire, and at the same time, it does not affect the structure of the core detection area of ​​the superconducting nanowire, ensuring the detector's The detection efficiency is not affected by the circuit structure.

Description

technical field [0001] The invention relates to a high-speed superconducting nanowire single-photon detector, which shortens the recovery time of the detector and improves the maximum counting rate through the optimization of the device circuit structure, readout mode and preparation scheme. Background technique [0002] In applications such as deep space communication and quantum communication, detectors are required to maintain high detection efficiency and low dark count to detect a single photon. After that, its detection efficiency can return to the initial value in a short time to achieve the detection of the next photon again. [0003] Superconducting nanowire single photon detectors have the characteristics of high efficiency and low dark count, but due to the relatively long length of nanowires, they usually have a dynamic inductance value of several hundred nH. Therefore, after the detector detects a photon, the recovery of the bias current needs to go through a f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/44
CPCG01J1/44G01J2001/442G01J2001/448
Inventor 赵清源康琳陶旭
Owner NANJING UNIV
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