Chemical mechanical grinding processing method and system
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A chemical mechanical and grinding process technology, applied in grinding devices, grinding machine tools, manufacturing tools, etc., can solve the problems that chemical mechanical grinding cannot efficiently improve flatness and other problems
Pending Publication Date: 2019-11-26
CHANGXIN MEMORY TECH INC
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Problems solved by technology
At present, in the existing chemical mechanical polishing process, the same system is used to control the polishing parameters for all wafers, which cannot meet the requirements of chemical mechanical polishing for efficient improvement of flatness
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Embodiment 1
[0053] A kind of chemical mechanical polishing process method of this embodiment, refer to figure 1 As shown, the method includes:
[0054] Step S10: group the wafers obtained from different production rooms according to the outline type to obtain multiple wafer groups.
[0055] Step S20: establishing a control model for each wafer group, wherein the control model includes grinding parameters for the wafers.
[0056] Step S30: Grinding the wafers in the wafer group according to the grinding parameters.
[0057] Step S40: collecting the removal amount of the film thickness of the wafer during the grinding process.
[0058] Step S50: Adjust the grinding parameters of the next wafer in the same wafer group according to the removal amount of the film thickness of the wafer, and grind the next wafer according to the adjusted grinding parameters.
[0059] In a specific embodiment, the previous wafer information (Priorlayers wafer information) and the pre-measure (Pre-measure) pro...
Embodiment 2
[0098] A kind of chemical mechanical polishing process system of this embodiment, refer to Image 6 shown, including:
[0099] a plurality of production chambers 110 for producing wafers, wherein the surfaces of wafers produced by different said production chambers 110 have different profiles; and
[0100] The polishing device 120 is used to realize the chemical mechanical polishing process method as described in the first embodiment.
[0101] In a specific embodiment, the grinding device 120 includes: a front measurement module 121 , a rear measurement module 124 , a control system 122 and a grinding machine table 123 .
[0102] The front measurement module 121 is connected with the production chamber 110, and the front measurement module 121 is used for measuring the first film thickness of the wafer before the chemical mechanical polishing process.
[0103] The post-measurement module 124 is connected to the grinder table 123, and the post-measurement module 124 is used f...
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Abstract
The invention provides a chemical mechanical grinding processing method and system. The method comprises the following steps: wafers obtained by different production chambers are grouped according toprofile types to obtain multiple wafer sets; control models are built for each wafer set, and comprise wafer grinding parameters; the wafers in the wafer sets are grinded according to the grinding parameters; wafer film thickness removing quantities are acquired in the grinding process; the grinding parameters of the next wafers in the same wafer sets are adjusted according to the wafer film thickness removing quantities; and the next wafers are grinded according to the adjusted grinding parameters. The system comprises the production chambers and grinding devices; the wafers produced by the different production chambers have different surface profiles; and the grinding devices are used for realizing the chemical mechanical grinding processing method. The wafers with different profiles aregrouped; and one wafer set corresponds to one control system, so that the grinding parameters of chemical mechanical grinding processing are dynamically adjusted, and the wafer flatness in the chemical mechanical grinding processing is improved.
Description
technical field [0001] The invention relates to a process control system in chemical mechanical polishing, in particular to a process method and system for chemical mechanical polishing. Background technique [0002] As the line width of microelectronic devices decreases, the requirements for multilayer interconnection structures increase. A good flatness (profile) of the wafer is crucial to the photolithography and etching process, and is also the pursuit of the Chemical Mechanical Polishing (CMP) process. one of the main goals of . During the chemical mechanical polishing process, the polishing pad (Pad) will be deformed due to the top pressure, and at the same time, the retaining ring will inevitably have wear and deformation during the polishing process, which will lead to uneven pressure on the wafer surface, and the removal rate of the center and edge There is a noticeable difference, the flatness of the wafer is not good. [0003] In the process before chemical mech...
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