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AlN/AlGaN multi-period one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector

A technology of dimensional photonic crystals and photodetectors, applied in optics, instruments, circuits, etc., can solve the problems of limited response spectrum in the solar blind area, high cost, and difficult manufacturing cost, etc., and achieve the goal of improving the photocurrent response suppression ratio and widening the broadband Effect

Active Publication Date: 2019-11-26
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the narrow stopband width of most III-nitride photonic crystal filters in the reflection spectrum still cannot break through 20nm, and such a narrow stopband cannot effectively limit the response spectrum to the solar blind zone
Even if occasional researchers try to simulate double-periodic Al 0.98 In 0.02 N / Al 0.77 Ga 0.23 N Bragg mirrors in order to increase the stop band width, but in the actual preparation process, Al with high Al composition 0.98 In 0.02 N is difficult and expensive to fabricate and not a widely applicable solution

Method used

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  • AlN/AlGaN multi-period one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector
  • AlN/AlGaN multi-period one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector
  • AlN/AlGaN multi-period one-dimensional photonic crystal filter applied to solar blind photoelectric detector and solar blind photoelectric detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1: AlN / Al 0.5 Ga 0.5 N double-period one-dimensional photonic crystal filter

[0022] The film structure is: 1.76 / [A 1 / B 1 / A 1 ] 33 [A 2 / B 2 / A 2 ] 33 / 1.0. Where n=1.76 represents sapphire substrate, n=1.0 represents top air, A represents AlN, B represents Al 0.5 Ga 0.5 N, the subscripts 1 and 2 represent the center wavelengths of 285nm and 305nm respectively. The thickness is

[0023] Refer to attached figure 1 Design, using sapphire as the substrate, sequentially grow 33 groups of AlN / Al 0.5 Ga 0.5 N / AlN thicknesses are 16.88 / 29.87 / 16.88 respectively, and then continue to grow 33 groups of AlN / Al 0.5 Ga 0.5 The N / AlN thicknesses are 18.07 / 31.90 / 18.07, respectively. Input the material name and thickness of the 133-layer thin film structure into the simulation software TFCalc in sequence, and the calculated reflection spectrum can be analyzed and calculated, as shown in Figure 4 shown. This embodiment realizes a wide stop band of ab...

Embodiment 2

[0024] Example 2: AlN / Al 0.5 Ga 0.5 N three-period one-dimensional photonic crystal filter

[0025] The film structure is: 1.76 / [A 1 / B 1 / A 1 ] 33 [A 3 / B 3 / A 3 ] 33 [A 4 / B 4 / A 4 ] 33 / 1.0. Where n=1.76 represents sapphire substrate, n=1.0 represents top air, A represents AlN, B represents Al 0.5 Ga 0.5 N, the subscripts 1, 3, and 4 represent the center wavelengths of 285nm, 300nm, and 320nm, respectively. The thickness is

[0026] Refer to attached figure 2 Design, using sapphire as the substrate, growing up for 3 cycles in turn, 33 groups of AlN / Al in each cycle0.5 Ga 0.5 N / AlN, the thickness of each period is 16.88 / 29.87 / 16.88, 17.77 / 31.38 / 17.77, 18.96 / 33.47 / 18.96, respectively. Input the material name and thickness of the 199-layer thin film structure into the simulation software TFCalc in sequence, and then the calculated reflection spectrum can be analyzed and calculated, as shown in Figure 5 shown. A wide stop band of about 60nm from 280...

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Abstract

The invention discloses an AlN / Al0.5Ga0.5N multi-period one-dimensional photonic crystal filter applied to a solar blind photoelectric detector. The photonic crystal filter comprises a substrate, andfurther comprises two to three periodic AlN / Al0.5Ga0.5N / AlN structures growing on the substrate, wherein the growth period of AlN / Al0.5Ga0.5N / AlN is 33 groups in each periodic AlN / Al0.5Ga0.5N / AlN structure. The invention further discloses a solar blind photoelectric detector applying the photonic crystal filter. Compared with the traditional single-period AlN / AlGaN photonic crystal filter, the multi-period superposed photonic crystal filter disclosed by the invention realizes a wide stop band with the peak reflectance of 280-320nm and 280-340nm reaching 99% which is 2-3 times of the highest stop band of the single-period AlN / AlGaN photonic crystal filter. The multi-period superposed photonic crystal filter can improve the performance such as the photocurrent response rejection ratio of a solar blind area and a visible blind area when being integrated on the solar blind detector.

Description

technical field [0001] The invention relates to an AlN / AlGaN multi-period one-dimensional photonic crystal filter applied to a solar-blind photodetector, belonging to the field of solar-blind photodetection. Background technique [0002] In recent years, whether in civilian or military fields, such as missile early warning, space communication security, engine control, etc., the potential application value of solar-blind photodetectors has aroused widespread concern in the society. However, the response of the device to light outside the solar blind zone is still a key issue that needs to be solved urgently, which affects the detection sensitivity of the device to deep ultraviolet signals. Although some materials such as Ga 2 o 3 , AlGaN and other theoretically due to its intrinsic solar-blind characteristics, it does not need additional filter assistance to realize solar-blind detection, but the photocurrent response in the solar-blind area caused by defects and impuritie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/20G02B1/00H01L31/0232
CPCG02B5/20G02B1/005H01L31/0232
Inventor 袁如月陈敦军游海帆蔡青郭慧张荣郑有炓
Owner NANJING UNIV