IGBT physical model parameter extraction method

A technology of model parameters and physical models, applied in the fields of digital memory information, electrical digital data processing, special data processing applications, etc., can solve the problems of large model error, poor operability, and the influence of extraction circuit accuracy.

Pending Publication Date: 2019-11-26
NAVAL UNIV OF ENG PLA
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Problems solved by technology

The former makes the model error larger and it is difficult to meet the accuracy requirements; the latter extraction steps are cumbersome, and affected by the accuracy of

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  • IGBT physical model parameter extraction method
  • IGBT physical model parameter extraction method
  • IGBT physical model parameter extraction method

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[0059] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments to facilitate a clear understanding of the present invention, but they do not limit the present invention.

[0060] The present invention provides a method for extracting IGBT physical model parameters, which is characterized by including the following steps: obtaining the initial value and conversion range of the IGBT physical model parameters; through the correspondence between the IGBT dynamic and static characteristics and the IGBT model parameters and combining the IGBT model parameter experiments The measurement results modify the model parameters, and the specific steps are as follows:

[0061] 1. Determination of the initial values ​​of IGBT physical model parameters and their reasonable ranges

[0062] The typical structure diagram of IGBT is as follows figure 1 Shown. The physical model parameters mainly include: V th , C GS , C ...

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Abstract

According to the technical scheme adopted by the invention, the IGBT physical model parameter extraction method is characterized by comprising the following steps: acquiring an initial value and a transformation range of an IGBT physical model parameter; and correcting the model parameters through the corresponding relationship between the IGBT dynamic and static characteristics and the IGBT modelparameters and in combination with the IGBT model parameter experiment measurement result. Aiming at the defects in the prior art, the invention provides the IGBT physical model parameter extractionmethod, so that the requirement of parameter extraction on the model simulation precision is ensured, the IGBT physical model parameter extraction method can be greatly simplified, and the practicability of the IGBT physical model is improved.

Description

technical field [0001] The invention relates to the technical field of modeling and reliability of power electronic devices, in particular to a method for extracting parameters of an IGBT physical model. Background technique [0002] For an IGBT with a certain structure, the internal parameters of the device have a decisive impact on its performance. These parameters include structure size, doping concentration, excess carrier lifetime, junction capacitance, transconductance, etc., which will directly affect the IGBT’s pass-through. Various dynamic and static performance indicators such as state voltage drop, switching speed, and turn-off tail current. Therefore, in order to establish an accurate IGBT semiconductor physical model and realize accurate simulation of IGBT electrical characteristics, the accurate extraction of parameters is an indispensable key link. At the same time, the model parameters also have important application value for the design and manufacture of I...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG11C29/54H01L29/7395G11C7/04G06F30/367G06F30/39G06F30/3308H01L29/7393
Inventor 罗毅飞肖飞刘宾礼黄永乐李鑫段耀强普靖熊又星
Owner NAVAL UNIV OF ENG PLA
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