Method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry)
An ICP-AES and impurity element technology, applied in the direction of material excitation analysis, thermal excitation analysis, etc., can solve the problems of low sensitivity of short-wave elements and the inability to accurately calculate the content of impurity elements As and Sb in silicon bronze, so as to improve sensitivity, Effect of Optimizing Instrument Parameters
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specific Embodiment approach 1
[0033] Specific embodiment one: the method for accurately measuring the content of impurity elements As and Sb in silicon bronze with ICP-AES in this embodiment is completed according to the following steps:
[0034] 1. Light chamber treatment: Use high frequency for 30min~60min first, then low frequency for 60min~120min to purify the light chamber with ultraviolet light;
[0035] 2. Exposure: Expose the standard sample containing As and the standard sample containing Sb;
[0036] 3. Parameter setting: In the optical chamber, set the parameters of the inductively coupled plasma spectrometer: the incident power is 1.0kW~1.2kW, the cooling air flow is 18L / min~20L / min, and the auxiliary air flow is 0.3L / min ~0.4L / min, the atomizing gas flow rate is 32L / min~34L / min, the peristaltic pump is 1.3mL / min~1.4mL / min, and the vertical observation method is used for observation;
[0037] 4. Standard curve selection:
[0038] ①. Prepare As solutions with different concentrations within th...
specific Embodiment approach 2
[0041] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in the first step, the high frequency is used for 30 minutes, and then the low frequency is used for 60 minutes to purify the optical chamber with ultraviolet light.
[0042] Other steps are the same as in the first embodiment.
specific Embodiment approach 3
[0043] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: In the second step, the standard sample containing As and the standard sample containing Sb are exposed for 80 s to 120 s.
[0044] Other steps are the same as those in Embodiment 1 or 2.
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