Method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry)

An ICP-AES and impurity element technology, applied in the direction of material excitation analysis, thermal excitation analysis, etc., can solve the problems of low sensitivity of short-wave elements and the inability to accurately calculate the content of impurity elements As and Sb in silicon bronze, so as to improve sensitivity, Effect of Optimizing Instrument Parameters

Pending Publication Date: 2019-11-29
AVIC HARBIN BEARING
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Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the ICP-AES instrument in the prior art has low sensitivity to short-wave elements and cannot accurately calculate the content of impurity elements As and Sb in silicon bronze, and provide accurate measurement of impurities in silicon bronze by ICP-AES. The method of element As, Sb content

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  • Method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry)
  • Method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry)
  • Method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry)

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specific Embodiment approach 1

[0033] Specific embodiment one: the method for accurately measuring the content of impurity elements As and Sb in silicon bronze with ICP-AES in this embodiment is completed according to the following steps:

[0034] 1. Light chamber treatment: Use high frequency for 30min~60min first, then low frequency for 60min~120min to purify the light chamber with ultraviolet light;

[0035] 2. Exposure: Expose the standard sample containing As and the standard sample containing Sb;

[0036] 3. Parameter setting: In the optical chamber, set the parameters of the inductively coupled plasma spectrometer: the incident power is 1.0kW~1.2kW, the cooling air flow is 18L / min~20L / min, and the auxiliary air flow is 0.3L / min ~0.4L / min, the atomizing gas flow rate is 32L / min~34L / min, the peristaltic pump is 1.3mL / min~1.4mL / min, and the vertical observation method is used for observation;

[0037] 4. Standard curve selection:

[0038] ①. Prepare As solutions with different concentrations within th...

specific Embodiment approach 2

[0041] Embodiment 2: The difference between this embodiment and Embodiment 1 is that in the first step, the high frequency is used for 30 minutes, and then the low frequency is used for 60 minutes to purify the optical chamber with ultraviolet light.

[0042] Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0043] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: In the second step, the standard sample containing As and the standard sample containing Sb are exposed for 80 s to 120 s.

[0044] Other steps are the same as those in Embodiment 1 or 2.

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Abstract

The invention discloses a method for measuring content of impurity elements As and Sb in silicon bronze with ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry), relates to the technicalfield of content measurement of elements in the silicon bronze, and aims to solve the problem that the content of the impurity elements As and Sb in the silicon bronze cannot be calculated accuratelysince an ICP-AES instrument in the prior art has relatively low sensitivity to short wave elements. The method comprises the following steps: performing ultraviolet purging on a light room, and exposing samples containing As and Sb respectively; adjusting parameters in the light room, drawing standard curves of different concentrations, selecting a group of optimal standard curves, and setting the parameters of the standard curves into an inductively coupled plasma spectrometer; and inserting a feeding needle into a liquid to be measured, measuring the liquid to be measured with the ICP-AES,and performing calculation according to the measurement result to obtain the content of the impurity elements As and Sb in the silicon bronze. Through adoption of the method, the content of the impurity elements As and Sb in the silicon bronze can be measured accurately with the ICP-AES.

Description

technical field [0001] The invention relates to the technical field of element content measurement in silicon bronze, in particular to a method for accurately measuring the content of impurity elements As and Sb in silicon bronze. Background technique [0002] As the main raw material of bearing cage, silicon bronze plays a very important role in the bearing production process. The properties of the material itself, such as structure, hardness, etc., are easy to change with the change of the environment under the change of the working conditions, but the composition of the material will not change with the change of the environment, such as temperature, etc. . Whether the content of the ingredients is strictly controlled within the qualified range, and whether the element detection results are accurate, can directly trace the legal responsibility. Therefore, accurate measurement of raw material elements is very necessary for the delivery of finished products. [0003] For...

Claims

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Application Information

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IPC IPC(8): G01N21/73
CPCG01N21/73
Inventor 杨晶赵强杜姣婧王世宇李博瀚冯旭
Owner AVIC HARBIN BEARING
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