Unlock instant, AI-driven research and patent intelligence for your innovation.

Morphological analysis method and device of etched structure

An analysis method and analysis device technology, which is applied in the direction of measuring devices, optical devices, instruments, etc., can solve problems such as cumbersome operations, and achieve the effect of improving accuracy and simplifying the steps of shape analysis

Active Publication Date: 2021-05-18
YANGTZE MEMORY TECH CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method and device for analyzing the morphology of an etched structure, which is used to solve the problem of cumbersome operations in the process of analyzing the morphology of the etched structure in the prior art, so as to improve the semiconductor manufacturing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Morphological analysis method and device of etched structure
  • Morphological analysis method and device of etched structure
  • Morphological analysis method and device of etched structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The specific implementations of the method and device for analyzing the morphology of etched structures provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] In the preparation process of semiconductor devices such as 3D NAND memory, it is often necessary to form etching structures such as trenches and channel holes, accurately analyze the morphology of the etching structure, and obtain various morphology characteristic parameters of the etching structure. An important step in improving the manufacturing process of semiconductor devices. At present, two methods are mainly used to analyze the morphology of the etched structure: one is to use a high-voltage scanning electron microscope (High-Voltage Scanning Electron Microscope, HV-SEM), but this method can only measure the top of the etched structure. And the characteristic size of the bottom, the bending state of the etched structure, the characterist...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a method and device for analyzing the morphology of an etched structure. The method for analyzing the morphology of the etched structure includes the following steps: providing a substrate with an etched structure inside; filling the etched structure to form a filling structure; removing the substrate to expose the filling structure; analyzing the filling structure to obtain the morphology of the etching structure. The invention simplifies the morphology analysis steps of the etched structure and improves the accuracy of the etched structure morphology analysis.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method and device for analyzing the morphology of an etched structure. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and pursue lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged, such as 3D NOR (3D or not) flash memory and 3D NAND (3D NAND) flash memory. [0003] In semiconductor device structures such as 3D NAND memory, it is usually necessary to form etching structures such as deep holes and trenches through an etching pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01B11/24
CPCG01B11/24
Inventor 王凡
Owner YANGTZE MEMORY TECH CO LTD