Unlock instant, AI-driven research and patent intelligence for your innovation.

Nitride epitaxial structure grown on silicon base substrate and its growth method

A technology of epitaxial structures and nitrides, which is applied in semiconductor devices, electrical components, circuits, etc., and can solve problems such as the difficulty in growing large-scale silicon-based gallium nitride

Active Publication Date: 2021-08-03
SHANGHAI IND U TECH RES INST
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, compared with small-sized (2-6 inches) wafers, it is much more difficult to grow large-sized GaN-on-Si. 16.9% and 54%, so in order to prepare epitaxial wafers without plastic deformation and cracks, it is necessary to control the stress balance during high temperature growth and cooling

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride epitaxial structure grown on silicon base substrate and its growth method
  • Nitride epitaxial structure grown on silicon base substrate and its growth method
  • Nitride epitaxial structure grown on silicon base substrate and its growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1 of the present application provides a method for growing a nitride epitaxial structure on a silicon-based substrate. Nitride epitaxial structure.

[0035] figure 1 is a schematic diagram of the method for growing a nitride epitaxial structure on a silicon-based substrate in this embodiment, as figure 1 As shown, the method includes:

[0036] Step 101, growing a nitride nucleation layer on the surface of the silicon-based substrate;

[0037] Step 102, growing a nitride buffer layer on the surface of the nitride nucleation layer; and

[0038] Step 103 , growing a predetermined number of laminated layers consisting of nitride insertion layer and nitride buffer layer sequentially on the surface of the nitride buffer layer.

[0039] In this embodiment, in each stack, the nitride buffer layer is grown on the surface of the nitride insertion layer, and the nitride insertion layer of the previous stack is grown on the nitride buffer layer of the next stack sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present application provides a nitride epitaxial structure grown on a silicon-based substrate and a growth method thereof, the method comprising: growing a nitride nucleation layer on the surface of the silicon-based substrate; growing nitrogen on the surface of the nitride nucleation layer a nitride buffer layer; and sequentially grow a predetermined number of stacked layers consisting of a nitride insertion layer and a nitride buffer layer on the surface of the nitride buffer layer, the carrier gas is a mixed gas containing at least two gases, and during the growth In the step of the nitride nucleation layer and / or the nitride insertion layer, adjust the component ratio of each gas in the carrier gas to control the formation of the nucleation layer and / or the nitride insertion layer surface compressive stress generated in the nitride buffer layer during the step of nitride buffer layer. According to this application, a nitride epitaxial structure with a thicker thickness and higher crystal quality can be obtained.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a nitride epitaxial structure grown on a silicon-based substrate and a growth method thereof. Background technique [0002] Nitride-related devices have received increasing attention due to the wide range of applications in light-emitting diodes (LEDs) and power electronics. At present, nitride devices can be epitaxially grown on a variety of substrates, including silicon, silicon carbide, sapphire and gallium nitride substrates, but considering the advantages of low cost and compatibility with CMOS processes, large size (8 inches and above) ) Silicon-based gallium nitride materials are used more and more. [0003] However, compared with small-sized (2-6 inches) wafers, it is much more difficult to grow large-sized GaN-on-Si. 16.9% and 54%, so in order to prepare epitaxial wafers without plastic deformation and cracks, it is necessary to control the stress bala...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/32
CPCH01L33/007H01L33/32
Inventor 王玮竹
Owner SHANGHAI IND U TECH RES INST